UTC UTC2SC1815 Datasheet

UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR

FEATURES

*Collector-Emitter voltage:
BV

CEO

*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015

=50V

1

TO-92

1:EMITTER 2:COLLECTOR 3. BASE

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATING UNIT

Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector dissipation(Ta=25°C)

Collector current Ic 150 mA
Base current IB 50 mA
Junction Temperature Tj 125
Storage Temperature T

( Ta=25°C ,unless otherwise specified )

60 V

CBO

50 V

CEO

5 V

EBO

Pc 400 mW

°C

-55 ~ +150

STG

°C

ELECTRICAL CHARACTERISTICS

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector cut-off current I

Emitter cut-off current I
DC current gain(note) h

Collector-emitter saturation voltage VCE(sat) Ic=100mA,IB=10mA 0.1 0.25 V

Base-emitter saturation voltage VBE(sat) Ic=100mA,IB=10mA 1.0 V
Current gain bandwidth product fT V

Output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.0 pF

Noise Figure NF Ic=-0.1mA,VCE=6V

(Ta=25°C,unless otherwise specified)

V

CBO

V

EBO

FE1

h

FE2

=60V,IE=0 100 nA

CB

=5V,Ic=0 100 nA

EB

V

=6V,Ic=2mA

CE

=6V,Ic=150mA

V

CE

=10V,Ic=50mA 80 MHz

CE

=10kΩ,f=100Hz

R

G

70
25

700

1.0 1.0 dB

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R201-006,A

1

UTC 2SC1815 NPN EP IT AX IA L SIL IC ON T RA NS IS TOR

CLASSIFICATION OF hFE1

RANK Y G L

RANGE 120-240 200-400 350-700

TYPICAL CHARACTERISTIC CURVES

Fig.1 Static characteristics

100

80

60

40

20

Ic,Collector current (mA)

0

04 8 121620

IB=300 µA

IB=250 µA

IB=200 µA

IB=150 µA

IB=100 µA

IB=50 µA

Collector-Emitter voltage ( V)

Fig.4 Saturation voltage

4

10

Ic=10*I

B

3

10

VBE(sat)

Fig.2 DC current Gain

3

10

2

10

1

, DC current Gain

10

FE

H

0

10

10

10

(MHz)

T

0

-1
10

10

Ic,Collector current (mA)

Fig.5 Current gain-bandwidth

3

2

product

10

1

VCE=6V

VCE=6V

Fig.3 Base-Emitter on Voltage

2

10

1

10

0

10

VCE=6V

Ic,Collector current (mA)

-1

10

3

2

10

10

0 0.2 0.4 0.6 0.8 1.0

Base-Emitter voltage (V)

Fig.6 Collector output

2

10

1

10

Capacitance

f=1MHz

E

=0

I

2

10

Saturation voltage (mV)

1

10

0

-1
10

10

Ic,Collector current (mA)

UTC

VCE(sat)

1

10

product,f

0

10

Cob,Capacitance (pF)

Current Gain-bandwidth

-1

1

10

10

10

10

3

2

0

-1
10

Ic,Collector current (mA)

1

10

0

10

10

0

2

10

10

1

10

Collector-Base voltage (V)

UNISONIC TECHNOLOGIES CO. LTD

2

10

10

QW-R201-006,A

3

2