UTC UTC2SB834 Datasheet
UTC 2SB834 PNP EPITAXIAL SILIC ON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Total Power Dissipation(Ta=25°C)
Collector current Ic 3 A
Junction Temperature Tj 150
Storage Temperature T
Base Current IB 0.5 A
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter breakdown voltage BV
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
Collector-emitter on voltage V
DC current gain hFE1
Current gain bandwidth product fT VCE=5V,IC=0.5A 9 MHZ
CLASSIFICATION of hFE1
RANK O Y GR
RANGE 60-120 100-200 150-300
CEO
CBO
EBO
CE(SAT)
CE(ON)
hFE2
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
( Operating temperature range applies unless otherwise specified )
60 V
CBO
60 V
CEO
7 V
EBO
Pc 30 W
°C
-55 ~ +150
STG
(Ta=25°C,unless otherwise specified)
Ic=50mA 60 V
V
V
I
V
=60V 100
CB
=7V 100
EB
=3A,IB=0.3A 1 V
C
=5V,IC=0.5A 0.7 1 V
CE
IC=0.5A,VCE=5V
=3A,VCE=5V
I
C
60
20
°C
300
µA
µA
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R203-014,A
1
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