UTC UTC2SB772S Datasheet
UTC 2SB772S PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
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FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Dissipation( Tc=25°C) Pc 10 W
Collector Dissipation( Ta=25°C) Pc 1 W
Collector Current(DC) Ic -3 A
Collector Current(PULSE) Ic -7 A
Base Current IB -0.6 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
TO-92
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA
Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -1000 nA
DC Current Gain(note 1) hFE1
hFE2
Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT VCE=-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
30
100
200
150 400
CLASSIFICATION OF hFE
RANK Q P E
RANGE 100-200 160-320 200-400
UTC UNISONIC TECHNOLOGIES CO. LTD
1
UTC 2SB772S PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
(MHz), Current gain-
T
F
-3
150
100
50
- Ic Derating(%)
0
3
10
2
10
1
10
bandwidth product
0
10
-2
10
1.6
1.2
0.8
-Ic,Collector current(A)
0.4
0
-IB=9mA
-IB=8MA
-IB=7mA
-IB=6mA
0 4 8 12 16 20
-Collector-Emitter voltage(V)
Fig.4 Collector Output
3
10
2
10
1
10
capacitance
IE=0
f=1MHz
Output Capacitance(pF)
0
10
0
10
-1
10
-Collector-Base Voltage(v)
-IB=5mA
-2
10
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
10
Fig.7 DC current gain
3
10
FE
2
10
1
10
VCE=-2V
DC current Gain,H
0
10
1
10010
10210310
-Ic,Collector current(mA) -Ic,Collector current(mA)
-Saturation Voltage(mV)
4
4
10
3
10
2
10
1
10
0
10
10010
Fig.2 Derating curve of safe
operating areas
S/b limited
Dissipation limited
Tc,Case Temperature(¢XC)
Fig.5 Current gainbandwidth product
VCE=5V
IB=8mAIB=8mA
-1
10
Ic,Collector current(A)
0
10
Fig.8 Saturation Voltage
VBE(sat)
VCE(sat)
1
10210310
200150100500-50
1
10
4
Fig.3 Power Derating
12
8
4
Power Dissipation(W)
0
Tc,Case Temperature(¢XC)
Fig.6 Safe operating area
Ic(max),Pulse
1
10
0
10
-1
10
-Ic,Collector current(A)
-2
10
10mS
Ic(max),DC
0
10
Collector-Emitter Voltage
200150100500-50
0.1mS
1mS
1
10
2
10
UTC UNISONIC TECHNOLOGIES CO. LTD
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