UTC UTC2SB772 Datasheet

UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE
TRANSISTOR

DESCRIPTION

The UTC 2SB772 is a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SD882

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Dissipation( Tc=25°C)
Collector Dissipation( Ta=25°C)
Collector Current(DC) Ic -3 A
Collector Current(PULSE) Ic -7 A
Base Current IB -0.6 A
Junction Temperature Tj 150
Storage Temperature TSTG -55 ~ +150

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA
Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -1000 nA
DC Current Gain(note 1) hFE1

Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT VCE=-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%

( Ta=25°C ,unless otherwise specified )

(Ta=25°C,unless otherwise specified)

hFE2

1

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

Pc 10 W
Pc 1 W

°C
°C

V

CE=-2V,Ic=-20mA

CE=-2V,Ic=-1A

V

30

100

200
150 400

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R204-002,A

1

UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE2

RANK Q P E

RANGE 100-200 160-320 200-400

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.1 Static characteristics

1.6

1.2

0.8

-Ic,Collector current(A)

0.4

0

-IB=9mA

-IB=8MA

-IB=7mA

04 8121620

-Collector-Emitter voltage(V)

-IB=6mA

-IB=5mA

-IB=4mA

-IB=3mA

-IB=2mA

-IB=1mA

Fig.2 Derating curve of safe

operating areas

150

100

D

i

50

- Ic Derating(%)

0

s

Tc,Case Temperature(°C)

Fig.3 Power Derating

12

S

/b

l

i

m

i

t

e

d

s

i

p

a

t

i

o

n

l

i

m

i

t

e

d

200150100500-50

8

4

Power Dissipation(W)

0

Tc,Case Temperature(°C)

200150100500-50

Fig.4 Collector Output

3

10

2

10

capacitance

IE=0

f=1MHz

3

10

2

10

Fig.5 Current gain­bandwidth product

VCE=5V

Fig.6 Safe operating area

Ic(max),Pulse

1

10

0

10

Ic(max),DC

1

0

m

0.1mS

1

m

S

S

IB=8mAIB=8mA

1

10

Output Capacitance(pF)

0

10

0

10

-1

10

-Collector-Base Voltage(v)

-2

-3

10

10

Fig.7 DC current gain

3

10

FE

2

10

1

10

VCE=-2V

DC current Gain,H

0

10

1

10010

10210310

-Ic,Collector current(mA) -Ic,Collector current(mA)

1

10

(MHz), Current gain-

bandwidth product

T

F

0

10

-2

-1

10

Ic,Collector current(A)

10

0

10

10

-1

10

-Ic,Collector current(A)

-2

10

1

0

10

Collector-Emitter Voltage

1

10

2

10

Fig.8 Saturation Voltage

4

10

VCE(sat)

VBE(sat)

1

10210310

4

3

10

2

10

1

10

-Saturation Voltage(mV)

0

10

4

10010

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R204-002,A

2