UTC UT8205AG-AG6-R, UT8205AG-P08-R, UT8205AG-S08-R Schematic [ru]

UNISONIC TECHNOLOGIES CO., LTD

UT8205A

Power MOSFET

N-CHANNEL ENHANCEMENT
MODE

 DESCRIPTION

The UT8205A uses advanced technology to provide fast

switching, low on-resistance and cost-effectiveness. This device is
suitable for all commercial-industrial surface mount applications.

 FEATURES

* R
* Ultra low gate charge ( typical 23 nC )
* Low reverse transfer Capacitance ( C
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness

 SYMBOL

 28 m @ VGS=4.5V, ID=6.0A

DS(ON)

= typical 150 pF )

RSS

D

G2G1

S1 S2

 ORDERING INFORMATION

Ordering Number Package

UT8205AG-AG6-R SOT-26 S1 D S2 G2 D G1 - - Tape Reel

UT8205AG-S08-R SOP-8 D S1 S1 G1 G2 S2 S2 D Tape Reel
UT8205AG-P08-R TSSOP-8 D S1 S1 G1 G2 S2 S2 D Tape Reel

Note: Pin Assignment: S: Source G: Gate D: Drain

 MARKING

SOP-8 TSSOP-8 SOT-26

Pin Assignment

12345678

Packing

www.unisonic.com.tw 1 of 3

Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-287.C

UT8205A Power MOSFET

 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V

Drain Current (Note 2)

Power Dissipation (Ta=25°C) (Note 3)

Continuous ID 6 A
Pulsed I
SOT-26 1.14 W

SOP-8/TSSOP-8
Junction Temperature TJ +150 °C
Storage Temperature T

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test : Pulse width≤300s, Duty cycle≤2%

3. Pulse width limited by T

J(MAX)

 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

SOT-26 110 °C/W

Junction to Ambient (Note)

Note: Pulse Test : Pulse width≤300s, Duty cycle≤2%

SOP-8 78 °C/W
TSSOP-8

20 V

DSS

±12 V

GSS

20 A

DM

PD

-55 ~ +150 °C

STG

1 W

JA

125 °C/W

 ELECTRICAL CHARACTERISTICS (T

=25°C, unless otherwise specified)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BV

Breakdown Voltage Temperature
Coefficient

Drain-Source Leakage Current I
Gate-Source Leakage Current I

VGS=0V, ID=250µA 20 V

DSS

BV

DSS

ID=1mA, Reference to 25°C 0.03 V/°C

T

J

VDS=20V, VGS=0V, 1 A

DSS

VGS=±8V ±100 nA

GSS

ON CHARACTERISTICS

Gate Threshold Voltage V

Drain-Source On-State Resistance (Note) R

VDS=VGS, ID=250µA 0.5 1.5 V

GS(TH)

VGS=4.5V, ID=6.0A 28 m

DS(ON)

V

=2.5V, ID=5.2A 38 m

GS

DYNAMIC PARAMETERS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

1035 pF

ISS

=20V, VGS=0V, f=1.0MHz

V

320 pF

OSS

RSS

DS

150 pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note) t
Turn-ON Rise Time tR 70 ns
Turn-OFF Delay Time t
Turn-OFF Fall-Time tF

30 ns

D(ON)

=5V, VDS=10V, RD=10,

V

GS

R

=6, ID=1A

40 ns

D(OFF)

G

65 ns
Total Gate Charge(Note) QG 23 nC
Gate Source Charge QGS 4.5 nC
Gate Drain Charge QGD

VDS =20V, VGS =5V, ID =6.0A

7 nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note) VSD I
Diode Continuous Forward Current IS V

=1.7A, VGS=0V 1.2 V

S

, VS=1.3V 1.54 A

D=VG

Note: Surface mounted on 1 in2 copper pad of FR4 board; 208°C/W when mounted on min.

UNISONIC TECHNOLOGIES CO., LTD 2 of 3

www.unisonic.com.tw QW-R502-287.C