UNISONIC TECHNOLOGIES CO., LTD
UT6402
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT6402 is N-Channel enhancement mode Power MOSFET,
designed with high density cell, with fast switching speed, low
on-resistance, excellent thermal and electrical capabilities, operation
with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3
1
2
SOT-23
4
5
6
3
2
1
SOT-26
ORDERING INFORMATION
Ordering Number Package
UT6402G-AE3-R SOT-23 S G D - - - Tape Reel
UT6402G-AG6-R SOT-26 D D G S D D Tape Reel
Note: Pin Assignment: S: Source G: Gate D: Drain
MARKING
SOT-23 SOT-26
64BG
Pin Assignment
1 2 3 4 5 6
Packing
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UT6402 Power MOSFET
)
)
)
)
ABSOLUTE MAXIMUM RATINGS (T
= 25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
30 V
DSS
±20 V
GSS
Continuous Drain Current (Note 3) ID 6.9 A
Pulsed Drain Current (Note 2) IDM 20 A
Power Dissipation PD 2 W
Junction Temperature TJ +150 °C
Strong Temperature T
-55 ~ +150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Junction to Ambient (Note 3) JA 74 110 °C/W
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
ON CHARACTERISTICS
Gate Threshold Voltage V
On State Drain Current I
Static Drain-Source On-Resistance
(Note
2)
DYNAMIC CHARACTERISTICS
Input Capacitance C
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2) t
Turn-ON Rise Time tR 4.1
Turn-OFF Delay Time t
Turn-OFF Fall-Time tF 5.2
Total Gate Charge (Note 2) QG
Gate Drain Charge QGD 3.2
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IS=1A 0.76 1 V
Maximum Body-Diode Continuous
Current
Reverse Recovery Time tRR IF=6.9 A, dI/dt=100A/s 16.5 20 ns
Reverse Recovery Charge QRR IF=6.9 A, dI/dt=100A/s 7.8 nC
Notes: 1. Pulse width limited by T
2. Pulse width 300us, duty cycle 0.5%.
3. Surface mounted on 1 in
J(MAX)
2
copper pad of FR4 board.
DSS
DSS
GSS
GS(TH
D(ON
R
DS(ON)
ISS
OSS
RSS
D(ON
D(OFF
I
S
=25°C, unless otherwise specified)
J
V
=0 V, ID =250µA 30 V
GS
VDS =30V, VGS =0 V 1 µA
VDS =0 V, VGS = ±20V ±100 nA
VDS =VGS, ID =250 µA 1 1.9 3 V
VDS =5V, VGS =4.5V 20 A
V
=10V, ID =6.9A 22.5 28 m
GS
VGS =4.5V, ID =5.0A 34.5 42 m
V
102
=15 V, VGS =0V, f=1MHz
DS
680 820
pF Output Capacitance C
77 108
V
=10V, VDS=15V, RL=2.2,
GS
R
=3
20.6
G
4.6
ns
11.5 13.88 16.7
V
=15V, VGS =10V, ID =6.9A
DS
nC Gate Source Charge QGS 1.82
3 A
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UT6402 Power MOSFET
TYPICAL CHARACTERISTICS
30
25
(A)
20
D
15
10
Drain Current,I
5
0
012345
(mΩ)
DS(ON)
On-Region Characteristics
10V
Drain to Source Voltage,VDS(V)
6V
5V
4.5V
VGS=3V
4V
3.5V
Transfer Characteristics
VDS=5V
125℃
25℃
1 1.5 2 2.5 3 3.5 4 4.5
0.5
Gate to Source Voltage,V
GS
(V)
(A)
D
Drain Current,I
20
16
12
8
4
0
0
Drain to Source On-
Resistance,R
(mΩ)
DS(ON)
Drain to Source On-
Resistance,R
Normalized On-Resistance
(A)
S
Reverse Drain Current,I
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UT6402 Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
10
Gate-Charge Characteristics
VDS=15V
(V)
GS
ID=6.9A
8
6
4
2
Gate to Source Voltage,V
0
02 4
6
Gate Charge,QG(nC)
Maximum Forward Biased Safe
Operating Area
(A)
D
100
10
R
DS(ON)
Limited
810
100μs
1ms
10ms
12
10μs
14
1000
Capacitance Characteristics
f=1MH
900
Z
VGS=0V
800
)
700
F
p
(
600
e
c
n
a
500
t
i
c
a
400
p
a
C
300
200
100
C
RSS
0
0
5
C
ISS
C
OSS
10 15
20 25
30
Drain to Source Voltage,VDS(V)
Single Pulse Power Rating
40
Junction-to-Ambient
T
J(Max)
T
=150℃
=25℃
A
30
20
Power (W)
10
0
0.001 0.01 0.1
Pulse Width (s)
1
Drain Current,I
T
=150℃
J(Max)
T
=25℃
0.1
A
0.1 1 10
Drain to Source Voltage,VDS(V)
0.1s
1s
10s
DC
100
Normalized Maximum Transient Thermal Impedance
10
In descending order
P
DM
T
ON
T
T
1
θJA
0.1
Resistance,Z
Normalized Transient Thermal
D=T
J,PK=TA+PDM
R
=62.5℃/W
θJA
/T
ON
.Z
θJA.RθJA
Single Pulse
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
1
10
100 1000
1000
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UT6402 Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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