UTC UT6402G-AE3-R, UT6402G-AG6-R Schematic [ru]
UNISONIC TECHNOLOGIES CO., LTD
UT6402
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT6402 is N-Channel enhancement mode Power MOSFET,
designed with high density cell, with fast switching speed, low
on-resistance, excellent thermal and electrical capabilities, operation
with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3
1
2
SOT-23
4
5
6
3
2
1
SOT-26
ORDERING INFORMATION
Ordering Number Package
UT6402G-AE3-R SOT-23 S G D - - - Tape Reel
UT6402G-AG6-R SOT-26 D D G S D D Tape Reel
Note: Pin Assignment: S: Source G: Gate D: Drain
MARKING
SOT-23 SOT-26
64BG
Pin Assignment
1 2 3 4 5 6
Packing
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UT6402 Power MOSFET
)
)
)
)
ABSOLUTE MAXIMUM RATINGS (T
= 25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
30 V
DSS
±20 V
GSS
Continuous Drain Current (Note 3) ID 6.9 A
Pulsed Drain Current (Note 2) IDM 20 A
Power Dissipation PD 2 W
Junction Temperature TJ +150 °C
Strong Temperature T
-55 ~ +150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Junction to Ambient (Note 3) JA 74 110 °C/W
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
ON CHARACTERISTICS
Gate Threshold Voltage V
On State Drain Current I
Static Drain-Source On-Resistance
(Note
2)
DYNAMIC CHARACTERISTICS
Input Capacitance C
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2) t
Turn-ON Rise Time tR 4.1
Turn-OFF Delay Time t
Turn-OFF Fall-Time tF 5.2
Total Gate Charge (Note 2) QG
Gate Drain Charge QGD 3.2
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IS=1A 0.76 1 V
Maximum Body-Diode Continuous
Current
Reverse Recovery Time tRR IF=6.9 A, dI/dt=100A/s 16.5 20 ns
Reverse Recovery Charge QRR IF=6.9 A, dI/dt=100A/s 7.8 nC
Notes: 1. Pulse width limited by T
2. Pulse width 300us, duty cycle 0.5%.
3. Surface mounted on 1 in
J(MAX)
2
copper pad of FR4 board.
DSS
DSS
GSS
GS(TH
D(ON
R
DS(ON)
ISS
OSS
RSS
D(ON
D(OFF
I
S
=25°C, unless otherwise specified)
J
V
=0 V, ID =250µA 30 V
GS
VDS =30V, VGS =0 V 1 µA
VDS =0 V, VGS = ±20V ±100 nA
VDS =VGS, ID =250 µA 1 1.9 3 V
VDS =5V, VGS =4.5V 20 A
V
=10V, ID =6.9A 22.5 28 m
GS
VGS =4.5V, ID =5.0A 34.5 42 m
V
102
=15 V, VGS =0V, f=1MHz
DS
680 820
pF Output Capacitance C
77 108
V
=10V, VDS=15V, RL=2.2,
GS
R
=3
20.6
G
4.6
ns
11.5 13.88 16.7
V
=15V, VGS =10V, ID =6.9A
DS
nC Gate Source Charge QGS 1.82
3 A
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