UTC UT6401G-AE3-R, UT6401G-AG6-R Schematic [ru]
UNISONIC TECHNOLOGIES CO., LTD
UT6401
Power MOSFET
5A, 30V P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UT6401 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching
speed, low on-resistance, excellent thermal and electrical
capabilities, operation with low gate charge.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3
1
2
SOT-23
(SC-59)
4
5
6
3
2
1
SOT-26
ORDERING INFORMATION
Ordering Number Package
UT6401G-AE3-R SOT-23 S G D - - - Tape Reel
UT6401G-AG6-R SOT-26 D D G S D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
Pin Assignment
1234 5 6
Packing
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UT6401 Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T
= 25℃, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (Note 3) ID -5
Pulsed Drain Current (Note 2) IDM -20
Power Dissipation
SOT-23 1.38
SOT-26
-30
DSS
±12
GSS
PD
V
A
2
W
Junction Temperature TJ +150 °C
Storage Temperature T
-55 ~ +150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Junction to Ambient (Note 3)
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
ON CHARACTERISTICS
Gate Threshold Voltage V
On State Drain Current I
Static Drain-Source On-Resistance (Note 2) R
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2) t
Turn-ON Rise Time tR 3 ns
Turn-OFF Delay Time t
Turn-OFF Fall Time tF
Total Gate Charge (Note 2) QG 9.5 nC
Gate-Source Charge QGS 2.1 nC
Gate-Drain Charge QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V -0.75 -1 V
Maximum Continuous Drain-Source Diode
Forward Current
MAXIMUN Body-Diode Pulsed Current ISM -20 A
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5%.
SOT-23 90
SOT-26
=25℃, unless otherwise specified)
J
VGS=0V, ID=-250uA -30 V
DSS
VDS=-24V, VGS=0V -1 uA
DSS
VDS=0V, VGS=±12V ±100 nA
GSS
VDS=VGS, ID=-250uA -0.7 -1 -1.3 V
GS(TH)
VDS=-5V, VGS=-4.5V -25 A
D(ON)
θJA
110
°C/W
VGS=-10V, ID=-5A 42 49 mΩ
DS(ON)
VGS=-4.5V, ID=-4A 53 64 mΩ
VGS=-2.5V, ID=-1A 81 119 mΩ
943 pF
ISS
VGS=0V,VDS=-15V,f=1.0MHz
108 pF
OSS
RSS
6 ns
D(ON)
=-15V, VGS=-10V,
V
DS
R
40 ns
D(OFF)
=6Ω, RL=3Ω
G
73 pF
11 ns
V
=-15V, VGS=-4.5V,
DS
I
=-5A
D
I
-5 A
S
2.9 nC
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