UTC UT06P03G-AB3-R, UT06P03G-AG6-R, UT06P03G-TN3-R Schematic [ru]

UNISONIC TECHNOLOGIES CO., LTD

UT06P03

Power MOSFET

P-CHANNEL
ENHANCEMENT MODE

 DESCRIPTION

The UT06P03 is P-Channel Power MOSFET, designed

with high density cell with fast switching speed, ultra low
on-resistance, excellent thermal and electrical capabilities.

 SYMBOL

1

SOT-89

6

1

TO-252

4

5

3

2

1

SOT-26

 ORDERING INFORMATION

Ordering Number

Lead Free Halogen Free

- UT06P03G-AB3-R SOT-89 G D S - - - Tape Reel

- UT06P03G-AG6-R SOT-26 D D G S D D Tape Reel

UT06P03L-TN3-R UT06P03G-TN3-R TO-252 G D S - - - Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

 MARKING

SOT-89 SOT-26 TO-252

456

6P03G

2

1

3

Package

Pin Assignment

1234 5 6

Packing

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UT06P03 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (T

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current ID -4 A
Pulsed Drain Current (Note 1, 2) IDM -20 A

SOT-89

Total Power Dissipation (TA = 25°C)

Junction Temperature TJ +150 °C
Storage Temperature T
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SOT-26 0.41 W
TO-252 1 W

= 25°C, unless otherwise specified)

C

-30 V

DSS

±20 V

GSS

0.78 W

PD

-55 ~ +150 °C

STG

 THERMAL DATA

PARAMETER SYMBOL MAX UNIT

Junction to Ambient

Junction to Case

SOT-89
SOT-26 300 °C/W
TO-252 110 °C/W
SOT-89
SOT-26 110 °C/W
TO-252 7.93 °C/W

JA

JC

160 °C/W

18 °C/W

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UT06P03 Power MOSFET

)

)

)

 ELECTRICAL CHARACTERISTICS (T

=25°C, unless otherwise noted)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I

V

DSS

VDS =-24V, VGS =0 V 1 µA

DSS

VDS =0 V, VGS = ±20V ±100 nA

GSS

=0 V, ID =-250µA -30 V

GS

ON CHARACTERISTICS

Gate Threshold Voltage V

Drain-Source On-State Resistance (Note 2) R

VDS =VGS, ID =-250 µA -0.9 -1.5 -3 V

GS(TH

V

=-4.5V, ID =-3A 60 75

GS

DS(ON)

VGS =-10V, ID =-4A 37 45

m

DYNAMIC PARAMETERS

Input Capacitance C

Reverse Transfer Capacitance C

ISS

V

135

OSS

70

RSS

=-15V, VGS =0V, f=1MHz

DS

530

pF Output Capacitance C

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2) t
Turn-ON Rise Time tR 10
Turn-OFF Delay Time t

D(ON

=-10V,VDS=-15V,RG=6,

V

GS

I

=-1A

18

D(OFF

D

5.7

ns

Turn-OFF Fall Time tF 5
Total Gate Charge (Note 2) QG
Gate-Source Charge QGS 2.2
Gate-Drain Charge QGD 2

V

DS

I

=-4A

D

=0.5BV

, VGS =-10V,

DSS

10 14

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage VSD IF = -1A, V

= 0V -1.2 V

GS

Maximum Body-Diode Continuous Current IS -2.1
Maximum Pulsed Drain-Source Diode
Forward Current (Note

1)
Reverse Recovery Time tRR
Recovery Charge QRR 7.9 nC
Notes: 1. Pulse width limited by T

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in

J(MAX)

2

copper pad of FR4 board.

I

-4

SM

=-4 A, dIF/dt=100A/s

I

F

15.5 ns

A

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