UTC PZT2222AG-AA3-R, PZT2222AL-AA3-R Schematics
UNISONIC TECHNOLOGIES CO., LTD
PZT2222A
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
ORDERING INFORMATION
Ordering Number
Lead Free Halogen Free 1 2 3
PZT2222AL-AA3-R
PZT2222AG-AA3-R
1
SOT-223
Package
SOT-223 B C E Tape Reel
Pin Assignment
Packing
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PZT2222A NPN SILICON TRANSISTOR
)
)
ABSOLUTE MAXIMUM RATING (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
75 V
CBO
40 V
CEO
6 V
EBO
C
0.6 A
Total Device Dissipation PC 1 W
Junction Temperature TJ +150 °C
Storage Temperature T
-55 ~ +150 °C
STG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 125 °C/W
ELECTRICAL CHARACTERISTICS (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BV
Collector-Emitter Breakdown Voltage BV
Emitter-Base Breakdown Voltage BV
Collector Cut-off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
CEO
CBO
EBO
Base Cut-Off Current IBL VCE=60V, V
=10μA, IE=0 75 V
CBOIC
=10mA, IB=0 40 V
CEOIC
=10μA, IC=0 6 V
EBOIE
VCE=60V, V
VCB=60V, IE=0 0.01
VCB=60V,IE=0, TA=150°C 10
=3.0V 10 nA
EB(OFF
μA
VEB=3.0V, IC=0 10 nA
=3.0V 20 nA
EB(OFF
ON CHARACTERISTICS
I
=0.1mA, VCE=10V 35
C
IC=1.0mA, VCE=10V 50
IC=10mA, VCE=10V 75
DC Current Gain hFE
IC=10mA, VCE=10V, TA=-55°C 35
IC=150mA, VCE=10V (Note) 100 300
IC=150mA, VCE=1.0V (Note) 50
IC=500mA, VCE=10V (Note) 40
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage (Note) V
V
CE(SAT)
BE(SAT)
IC=150mA, IB=15mA 0.3
IC=500mA, IB=50mA 1.0
IC=150mA, IB=15mA 0.6 1.2
IC=500mA, IB=50mA 2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT IC=20mA, VCE=20V, f=100MHz 300 MHz
Output Capacitance C
Input Capacitance C
VCB=10V, IE=0, f=100kHz 8.0 pF
OBO
VEB=0.5V, IC=0, f=100kHz 25 pF
IBO
Collector Base Time Constant rB'CC IC=20mA, VCB=20V, f=31.8MHz 150 pS
Noise Figure NF
Real Part of Common-Emitter High
Frequency Input Impedance
R
E(HJE)IC
C
f=1.0kHz
=20mA, VCB=20V, f=300MHz 60 Ω
4.0 dB
I
=100μA, VCE=10V, RS=1.0kΩ,
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PZT2222A NPN SILICON TRANSISTOR
)
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Delay time tD VCC=30V, V
Rise time tR IC=150mA, IB1=15mA 25 ns
Storage time tS VCC=30V, IC=150mA, 225 ns
Fall time tF IB1= IB2=15mA 60 ns
Note: Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
=25°C, unless otherwise specified)
A
=0.5V, 10 ns
BE(OFF
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