UTC MMBTA94G Schematic [ru]

UNISONIC TECHNOLOGIES CO., LTD
MMBTA94
HIGH VOLTAGE TRANSISTOR
* Collector-Emitter Voltage: V * Collector Dissipation: P * Low Collector-Emitter Saturation Voltage
APPLICATIONS
* Telephone Switching * High Voltage Switch
ORDERING INFORMATION
Note: Pin Assignment: E: Emitter B: Base C: Collector
C(MAX)
Ordering Number Package
MMBTA94G-AE3-R SOT-23 E B C Tape Reel
= -400V
CEO
= 350mW
PNP SILICON TRANSISTOR
3
1
2
SOT-23
(JEDEC TO-236)
Pin Assignment
1 2 3
Packing
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd QW-R206-008.F
MMBTA94 PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (T
=25°С unless otherwise specified)
A
PARAMETER SYMBOL RATING UNIT Collector-Base Voltage V Collector-Emitter Voltage V Emitter-Base Voltage V
-400 V
CBO
-400 V
CEO
-6 V
EBO
Collector Current IC -300 mA Collector Dissipation (Ta=25C) PC 350 mW Junction Temperature TJ +150 °С Storage Temperature T
-40~+150 °С
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
=25°С, unless otherwise specified)
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV Collector-Emitter Breakdown Voltage BV Collector-Emitter Breakdown Voltage BV Emitter-Base Breakdown Voltage BV Collector Cut-off Current I Collector Cut-off Current I Emitter Cut-off Current I
DC Current Gain (Note) hFE
IC = -100µA, IE=0 -400 V
CBO
IC = -1mA, IB=0 -400 V
CEO
IC = -100µA,VBE=0 -400 V
CES
IE= -100µA, IC=0 -5 V
EBO
VCB= -300V, IE=0 -100 nA
CBO
VCB= -400V, VBE=0 -1 µA
CES
VEB= -4V, IC=0 100 nA
EBO
V
= -10V, IC= -1mA 60
CE
VCE= -10V, IC= -10mA 70 300 VCE= -10V, IC= -50mA 70 VCE= -10V, IC= -100mA 40
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
CE(SAT)
BE(SAT)IC
IC= -10mA, IB= -1mA -0.20 V IC= -50mA, IB= -5mA -0.5 V
= -10mA, IB= -1mA -0.75 V Output Capacitance Cob VCB= -20V,IE=0, f =1MHz 7 pF Note: Pulse test: PW<300µs, Duty Cycle<2%
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