UTC BAT54SDWG-AL6-R Schematic [ru]

UNISONIC TECHNOLOGIES CO., LTD

BAT54SDW DIODE

SCHOTTKY BARRIER (DUAL)
DIODES

4

 DESCRIPTION

Planar Schottky barrier diodes are encapsulated in the SOT-363
small plastic SMD package. Single diodes and dual diodes with
different pin configuration are available.

 FEATURES

* Low forward voltage
* Guard ring protected
* Small plastic SMD package

 SYMBOL

5

6

3

2

1

SOT-363

 ORDERING INFORMATION

Ordering Number Package

BAT54SDWG-AL6-R SOT-363

Note: Pin Assignment: A: Anode K: Cathode

 MARKING

5

6

4

E44G

21

3

Pin Assignment

1 2 3 4 5 6

A1 K1 A2K2 A2 K2 A1K1

Packing

Tape Reel

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BAT54SDW DIODE

 ABSOLUTE MAXIMUM RATINGS (T

= 25°C, unless otherwise specified)

A

PARAMETER SYMBOL RATINGS UNIT

PER DIODE

Continuous Reverse Voltage VR 30 V
Continuous Forward Current IF 200 mA
Repetitive Peak Forward Current (tP <1s, δ≤0.5)
Non-repetitive Peak Forward Current (tP <10ms) I

300 mA

I

FRM

600 mA

FSM

Junction Temperature TJ +125 °C
Storage Temperature T

-60 ~ +150 °C

STG

PER DEVICE

Power Dissipation (TA≤25°C)

230 mW

P

D

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

Junction to Ambient θJA 625 °C/W

 ELECTRICAL CHARACTERISTICS (T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Forward Voltage

Reverse Current IR VR = 25V 2 μA

Reverse Recovery Time trr

Diode Capacitance

VF

C

D

= 25°C, unless otherwise specified)

A

= 0.1mA 240 mV

I

F

IF = 1mA 320 mV
IF = 10mA 400 mV
IF = 30mA 500 mV
IF = 100mA 1000 mV

When switched from IF =10mA

= 10mA, RL = 100Ω

to I

R

measured at I
f = 1 MHz, V

= 1mA

R

= 1V; 10 pF

R

5 ns

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