UTC 2SB1132G-P-AB3, 2SB1132G-P-TN3, 2SB1132G-Q-AB3, 2SB1132G-Q-TN3, 2SB1132G-R-AB3 Schematics

UNISONIC TECHNOLOGIES CO., LTD

2SB1132

PNP SILICON TRANSISTOR

MEDIUM POWER TRANSISTOR

 DESCRIPTION

The UTC 2SB1132 is a epitaxial planar type PNP silicon

transistor.

 FEATURES

* Low V

V

CE(SAT)

 ORDERING INFORMATION

.

CE(SAT)

= -0.2V(Typ.) (IC/IB= -500mA/-50mA)

Ordering Number

Lead Free Halogen Free 1 2 3
2SB1132L-x-AB3-R 2SB1132G-x-AB3-R SOT-89 B C E Tape Reel
2SB1132L-x-TN3-R 2SB1132G-x-TN3-R TO-252 B C E Tape Reel
2SB1132L-x-TN3-T 2SB1132G-x-TN3-T TO-252 B C E Tube

Package

Pin Assignment

Packing

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2SB1132 PNP SILICON TRANSISTOR

)

 ABSOLUTE MAXIMUM RATINGS (T

=25°C, unless otherwise specified)

A

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current DC

Collector Current (Single pulse, Pw=100ms)

Collector Power Dissipation

PULSE -2 A
SOT-89
TO-252 1 W

-40 V

CBO

-32 V

CEO

-5 V

EBO

I

C

PC

-1 A

0.5 W

Junction Temperature TJ 150 °C
Storage Temperature T

-55 ~ +150 °C

STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (T

=25°C, unless otherwise specified)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdown Voltage BV
Collector Emitter Breakdown Voltage BV
Emitter Base Breakdown Voltage BV
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage V

CE(SAT

CBOIC

CEOIC

EBOIE

CBO

EBO

= -50μA -40 V
= -1mA -32 V

= -50μA -5 V
VCB= -20V -0.5 μA
VEB= -4V -0.5 μA

IC = -500mA,IB= -50mA (Note) -0.2 -0.5 V
DC Current Transfer Ratio hFE VCE= -3V,IC = -0.1A (Note) 82 390
Transition Frequency fT VCE= -5V, IE= 50mA, f=30MHz 150 MHz
Output Capacitance COB VCB= -10V, IE=0A, f=1MHz 20 30 pF
Note: Measured using pulse current.

 CLASSIFICATION OF hFE

RANK P Q R

RANGE 82-180 120-270 180-390

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2SB1132 PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS

Collector Current, Ic(mA)

-500

-200

-100

-50

-20

-10

Grounded Emitter Propagation

Characteristics

TA=100

TA=25

TA= -55

-5

-2

-1

-0.2

-0.4 -0.6 -0.8 -1.6-1.4-1.2-1.0

0

Base to Emitter Voltage, V

VCE=-6V

(V)

BE

-500

-400

-300

-200

Collector Current, Ic(mA)

-100

0

0

Grounded Emitter Output

Characteristics

-5.0

-4.0

-4.5

-2.5

TA=25

IB=0mA

-3.0

-3.5

-0.4 -0.8 -1.6 -2.0-1.2

Collector to Emitter Voltage, V

-2.0

-1.5

-1.0

-0.5

CE

(V)

DC Current Gain vs. Collector Current ( )

1000

FE

500

200

DC Current Gain, h

100

50

-1 -2 -5 -10 -20
Collector Current, Ic(mA)

Collector-emitter Saturation Voltage vs.

-1
TA=25

( V)

IC/IB=10

-0.5

CE(SAT)

-0.2

-0.1

-0.05

Collector Current

-50-100-200-500-1000

TA=25

VCE= -3V

VCE= -1V

DC Current Gain vs.Collector Current ( )

1000

FE

500

TA=100

200

DC Current Gain, h

100

50

-1 -2 -5 -10 -20
Collector Current :Ic(mA)

Collector Emitter Saturation Voltage vs.

-1.0

(V)

CE

-0.8

-0.6

-0.4

TA=25

TA= -55

-50-100-200-500-1000

Base Current

IC = -500mA

VCE= -3V

TA=25

-0.02

-0.01

Collector Saturation Voltage, V

-1 -2 -5 -10 -20
Collector Current, Ic(mA)

-50-100-200-500-1000

-2000

-0.2

0

-1

IC= -300mA

-2 -5 -20 -50-10
Base Current, I

(mA)

B

-100

Collector to Emitter Voltage, V

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2SB1132 PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS(Cont.)

Gain Bandwidth Product

vs. Emitter Current

TA=25°C

VCE= -5V

200

(MHz)

T

100

100

(pF)

OB

50

Collector Output Capacitance

vs.Collector-Base Voltage

TA=25°C
f=1MHz

IE=0A

50

Transition Frequency, f

20

-5

-2

-1

-0.5

-0.2

-0.1

Collector Current, Ic (A)

-0.05

-0.02

-0.01

-2 -5 -20 -50-10

-1

TA=25°C

*Single pulse

0 -0.2 -0.5 -1 -2

Collector to Emitter Voltage, V

Emitter Current, I

Safe Operation Area

P

W

D

C

-5 -10 -20 -50

B

=

1

(mA)

0

0

m

-100

P

W

=

1

0

m

s

*

s

*

(V)

CE

20

Collector Output Capacitance, C

10

1000

100

10

Transient Thermal Resistance (°C/W)

0.1

0.001 0.01 0.1 1 10

-1 -2 -10 -20-5

-0.5
Collector to Base Voltage, V

Transient Thermal Resistance

1

Time, t(s)

(V)

CB

TA=25°C

100 1000

1.6

Power Derating

1.4

1.2
TO-252

1

0.8
SOT-89

0.6

0.4

0.2

0.0
0

25 50 75

Ambient Temperature, T

100

125

A

150

(  )

175

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2SB1132 PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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