UNISONIC TECHNOLOGIES CO., LTD
2SB1132
PNP SILICON TRANSISTOR
MEDIUM POWER TRANSISTOR
DESCRIPTION
The UTC 2SB1132 is a epitaxial planar type PNP silicon
transistor.
FEATURES
* Low V
V
CE(SAT)
ORDERING INFORMATION
.
CE(SAT)
= -0.2V(Typ.) (IC/IB= -500mA/-50mA)
Ordering Number
Lead Free Halogen Free 1 2 3
2SB1132L-x-AB3-R 2SB1132G-x-AB3-R SOT-89 B C E Tape Reel
2SB1132L-x-TN3-R 2SB1132G-x-TN3-R TO-252 B C E Tape Reel
2SB1132L-x-TN3-T 2SB1132G-x-TN3-T TO-252 B C E Tube
Package
Pin Assignment
Packing
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2SB1132 PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current DC
Collector Current (Single pulse, Pw=100ms)
Collector Power Dissipation
PULSE -2 A
SOT-89
TO-252 1 W
-40 V
CBO
-32 V
CEO
-5 V
EBO
I
C
PC
-1 A
0.5 W
Junction Temperature TJ 150 °C
Storage Temperature T
-55 ~ +150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdown Voltage BV
Collector Emitter Breakdown Voltage BV
Emitter Base Breakdown Voltage BV
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage V
CE(SAT
CBOIC
CEOIC
EBOIE
CBO
EBO
= -50μA -40 V
= -1mA -32 V
= -50μA -5 V
VCB= -20V -0.5 μA
VEB= -4V -0.5 μA
IC = -500mA,IB= -50mA (Note) -0.2 -0.5 V
DC Current Transfer Ratio hFE VCE= -3V,IC = -0.1A (Note) 82 390
Transition Frequency fT VCE= -5V, IE= 50mA, f=30MHz 150 MHz
Output Capacitance COB VCB= -10V, IE=0A, f=1MHz 20 30 pF
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK P Q R
RANGE 82-180 120-270 180-390
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