UTC 2N7002 Schematic [ru]

UNISONIC TECHNOLOGIES CO., LTD

2N7002

Power MOSFET

0.3A, 60V N-CHANNEL
POWER MOSFET

 DESCRIPTION

The UTC 2N7002 uses advanced technology to provide

excellent R
voltages. This device is suitable for use as a load switch or in PWM
applications.

 FEATURES

* High Density Cell Design for Low R
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability

 SYMBOL

, low gate charge and operation with low gate

DS(ON)

.

DS(ON)

 ORDERING INFORMATION

Ordering Number

Lead Free Halogen Free 1 2 3

2N7002L-AE2-R 2N7002G-AE2-R SOT-23-3 S G D Tape Reel

 MARKING

3P

L: Lead Free
G: Halogen Free

Package

Pin Assignment

Packing

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2N7002 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (T

=25°C, unless otherwise specified.)

A

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Drain-Gate Voltage (R

Gate Source Voltage

Drain Current

≤1MΩ) V

GS

Continuous
Non Repetitive(tP<50μs) ±40
Continuous
Pulsed 800

Power Dissipation
Derated Above 25°C 1.6 mW/°C

60 V

DSS

60 V

DGR

V

GSS

ID

PD

±20

300

V

mA

200 mW

Junction Temperature TJ + 150 °C
Storage Temperature T

-55 ~ +150 °C

STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 625 °C/W
Junction to Case θJC 215 °C/W

 ELECTRICAL CHARACTERISTICS (T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I

Gate-Source Leakage Current

ON CHARACTERISTICS

(Note)

Gate Threshold Voltage V

Drain-Source On-Voltage V

Static Drain-Source On-Resistance R

DSS

VDS=60V, VGS =0V 1 μA

DSS

I

V

GSSF

I

VGS =-20V, VDS=0V -100 nA

GSSR

GS(TH)

DS (ON)

DS (ON)

DYNAMIC CHARACTERISTICS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

VDS=25V,VGS=0V,f=1.0MHz 20 50 pF

ISS

11 25 pF

OSS

4 5 pF

RSS

Turn-On Time tON

Turn-Off Time t

OFF

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage VSD VGS=0V, Is=300mA (Note) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current
Maximum Continuous Drain-Source
Diode Forward Current

I

0.8 A

SM

I

300 mA

S

Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

=25°C, unless otherwise specified)

A

VGS=0V, ID=10μA 60 V

=20V, VDS=0V 100 nA

GS

VGS = VDS, ID=250μA 1 2.1 2.5 V

V

= 10V, ID=300mA 0.6 3.75

GS

VGS = 5.0V, ID=50mA 0.375
V

=10V, ID=300mA 7.5 Ω

GS

VGS =5.0V, ID=50mA 7.5 Ω

V

=30V, RL=150Ω, ID=200mA,

DD

V

=10V, R

GS

V

=30V, RL=25Ω, ID=200mA,

DD

V

=10V, R

GS

GEN

GEN

=25Ω

=25Ω

20 nS

20 nS

V

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2N7002 Power MOSFET

 TEST CIRCUIT AND WAVEFORM

V

DD

R

L

V

IN

V

D

V

GS

R

GEN

DUT

G

S

OUT

Fig. 1

t

D(ON)

Output, V

OUT

t

ON

t

R

t

D(OFF)

90%

10%10%

t

OFF

90%

t

F

Inverted

90%

Input, V

IN

50%50%

10%

Pulse Width

Fig. 2 Switching Waveforms

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