UTC 2N2955 Datasheet
UTC 2N2955 SI L I C O N P N P TRANSI S T O R
SILICON PNP TRANSISTORS
The UTC 2N2955 is a silicon PNP transistor in TO-3
metal case. It is intended for power switching circuits,
series and shunt regulators, output stages and high fidelity
amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS
PARAMETERS SYMBOL VALUE UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7 V
Collector-Emitter Voltage VCEV 70 V
Collector Current Ic 15 A
Collector Peak Current(1) ICM 15 A
Base Current IB 7 A
Base Peak Current(1) IBM 15 A
Total Dissipation at Ta=25°C
Storage Temperature TSTG -65 to 200
Max. Operating Junction Temperature Tj 200
( Ta=25°C ,unless otherwise specified )
tot 115 W
P
°C
°C
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
Collector-Emitter Sustaining Voltage VCER(sus) Ic=0.2 A, RBE=100 Ohms 70 V
Collector Cut-off Current ICEO VCE=30V,IB=0 0.7 mA
Collector Cut-off Current ICEX VCE=100V,VBE(off)=1.5V.
Emitter Cut-off Current IEBO VBE=7V,IC=0 5.0 mA
ON CHARACTERISTICS
DC Current Gain(note) hFE
Collector-Emitter Saturation Voltage VCE(sat) Ic=4A,IB=400mA
(Ta=25°C, unless otherwise specified)
VCEO(sus) Ic=200mA, IB=0V 60 V
CE=100V,VBE(off)=1.5V,
V
Ta=150°C
Ic=4A,V
Ic=10A,V
Ic=10A,I
CE=4V,
CE=4V
B=3.3A
1.0
20
70
5
1.1
mA
5.0
V
3.0
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R205-004,A
1
UTC 2N2955 SI L I C O N P N P TRANSI S T O R
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Base-Emitter On Voltage VBE(on) Ic=4A,VCE=4V 1.5 V
SECOND BREAKDOWN
Second Breakdown Collector with
Base Forward Biased
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product fT Ic=0.5A,VCE=10V,f=1MHz 2.5 MHz
Small-Signal Current Gain hFE Ic=1A,VCE=4V,f=1kHz 15 120
Small-Signal Current Gain
Cut-off Frequency
Note(1):Pulse Test: Puls Width<=300µs, Duty Cycle<=2%
Is/b VCE=60V,T=1.0s, Non-repetitive 2.87 A
fHFE Ic=1A,VCE=4V
F=1.0kHz
10 kHz
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R205-004,A
2
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