USHA TIP35B, TIP35C, TIP35A Datasheet
SILICON HIGH- POWER TRANSISTOR
NPN TIP35A/B/C
25A 125W
Technical Data
…designed for use in general-purpose switching and power amplifier
applications.
F DC Current Gain - h
F 25 A Collecter Current
F TO-218 Package
MAXIMUM RATINGS
Rating Symbol TIP35A TIP35B TIP35C Unit
= 15(Min) @ IC = 15 Adc
FE
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos
Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 125
Tj,Tstg -65 to +150
CEO
I
CB
EB
C
B
60 80 100 Vdc
60 80 100 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
5 Vdc
25
40
5 Adc
1
1.0 °C/W
Adc
Watts
W/°C
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ] TIP35A
TIP35B
TIP35C
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] TIP35A
TIP35B,TIP35C
Collector Cutoff Current
[ VCE =Rated V
CEO,VBE
= 0 ]
Emitter –Base Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 1.5 Adc , VCE = 4.0 Vdc ]
[ Ic = 15Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 15Adc , IB = 1.5Adc ]
[ Ic = 25Adc , IB = 5.0Adc ]
Base-Emitter on Voltage
[ Ic =15.0 Adc , VCE= 4V]
[ Ic =25.0 Adc , VCE= 4.0V]
V
V
V
I
CE0
I
CES
I
EBO
h
FE
CE(sat)
BE(on)
60
80
100
25
15
mAdc
1.0
1.0
700
µAdc
1 mAdc
--75
1.8
4.0
2.0
4.0
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=1Adc,VCE=10Vdc,ftest=1.0 MHz ]
Small-Signal Current Gain
[ IC= 1 Adc, VCE=10 Vdc, f=1kHz]
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
•
f
T
3 MHz
hfe 25
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