USHA TIP31C Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN TIP31C
3A 40W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F DC Current Gain - h FE = 10- 50 @ IC = 3.0Adc
F Collector-Emitter Saturation Voltage – V
F TO-220 Package
F Collector-Emitter Sustaining Voltage – V
MAXIMUM RATINGS
Rating Symbol Value Unit
(sat) = 1.2Vdc (Max)@IC=3Adc
CE
(sus) = 100Vdc (Min)
CE O
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos
Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 40
Tj,Tstg -65 to +150
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
CEO
I
thjc
100 Vdc
CB
EB
C
B
100 Vdc
5 Vdc
3
5
1 Adc
0.32
3.125
Adc
Watts
W/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 60 Vdc, IB = 0 ]
V
I
CE0
100 Vdc
0..3 mAdc
Collector Cutoff Current
[ VCE =100 Vdc,V
BE
= 0 ]
Emitter Cutoff Current
[ VBE =5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 1.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 3Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB = 375mAdc ) V
Base-Emitter on Voltage
[ Ic =3.0 Adc , VCE= 4.0. VDC ] V
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ]
Small-Signal Current Gain
[ IC= 0.5 Adc, VCE=10 Vdc, f=1kHz]
I
CES
I
EBO
h
FE
CE(sat)
BE(on)
f
T
hfe 20
200
µAdc
1
mAdc
25
10
--50
1.2 Vdc
1.8 Vdc
3 MHz
• Indicates within JEDEC Registration Data.
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
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