USHA TIP3055 Datasheet
SILICON POWER TRANSISTOR
NPN TIP3055
15A 90W
Technical Data
…designed for general-purpose switching and amplifier application.
F DC Current Gain - h FE = 20 – 70 @ I
F Collector-Emitter Saturation Voltage – V
F Excellent Safe Operating Area
F TO-218 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
= 4Adc
C
(sat) = 1.1 Vdc (Max) @ IC = 4Adc
CE
Collector- Emitter Voltage V
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos I
Base Current – Continuos I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 90
Tj,Tstg -65 to +150
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
CEO
CER
CB
EB
C
B
60 Vdc
70 Vdc
100 Vdc
7 Vdc
15 Adc
7 Adc
0.72
1.39
Watts
W/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=10 Vdc , f=1.0 MHz ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =30 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 70 Vdc, RBE= 100ohms ]
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ]
V
I
I
CER
CE0
60 Vdc
1.0 mAdc
0.70 mAdc
Collector Cutoff Current
[ VCE = 100 Vdc, V
BE(off)
= 1.5 Vdc ]
Emitter-Cutoff Current
[ VBE = 7.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 4.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 10 Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 4.0 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
Base-Emitter on Voltage
[ Ic = 4.0 Adc , VCE= 4.0. Vdc ]
SECOND BREAKDOWN
Second Breakdown Collector current
With Base Forward Biased
[VCE=30 Vdc, t = 1.0 s Nonrepetitive]
I
I
h
CEV
EBO
FE
20
5.0 mAdc
5.0 mAdc
70
5.0
V
CE(sat)
1.1
3.0
V
BE(on)
1.8 Vdc
1s/b 3 Adc
Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
f
T
[ Ic = 0.5Adc , V
Small Signal Current Gain
hfe 15
[ IC= 1.0 Adc, VCE=4.0 Vdc, f=1.0kHz]
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
2.5 MHz
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