USHA TIP122 Datasheet
SILICON DARLINGTON POWER TRANSISTOR
NPN TIP122
5A 65W
Technical Data
…designed for use in general-purpose low-speed switching and amplifier
applications.
F High DC Current Gain - h FE = 2500(Typ) @ IC = 4.0Adc
F Collector-Emitter Saturation Voltage – V
F TO-220 Package
F Collector-Emitter Sustaining Voltage – V
MAXIMUM RATINGS
Rating Symbol Value Unit
(sat) = 2Vdc (Max)@IC=3Adc
CE
(sus) = 100Vdc (Min)@100mAdc
CE O
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos
Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 65
Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
CEO
I
100 Vdc
CB
EB
C
B
100 Vdc
5 Vdc
5
8
120 mAdc
0.52
1.92
Adc
Watts
W/°C
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
V
[ Ic =100mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 50 Vdc, IB = 0 ]
Collector Cutoff Current
[ VCE =100 Vdc,V
BE
= 0 ]
Emitter Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 0.5 Adc , VCE = 3.0 Vdc ]
[ Ic = 3Adc , VCE =3.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB = 12mAdc ]
V
[Ic = 5Adc , IB = 20mAdc]
Base-Emitter on Voltage
[ Ic =3.0 Adc , VCE= 3.0. VDC ] V
I
CE0
I
CBO
I
EBO
h
FE
CE(sat)
BE(on)
100 Vdc
0.5 mAdc
200
µAdc
2 mAdc
1000
1000
---
---
2
Vdc
4
2.5 Vdc
DYNAMIC CHARACTERISTICS :
Output Capacitance
[VCB=10Vdc,IE=0,f=0.1MHz]
Small-Signal Current Gain
[ IC= 0.5 Adc, VCE=4.0 Vdc, f=1kHz]
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
C
OB
hfe 4
200 pF
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