Fast Recovery Diode
BYP30-600
Technical Data
Typical Applications : Inverse diode for power transistors , Invertor , UPS ,
Snubber and clamping diode .
Fetaures :
F Very short recovery times
F Soft recovery under all conditions
Case Outline :
Ø4.1
7
4.65
1.2
1.4
0.4
18
1.4
JEDEC
DO218
13
Fast Recovery Diode
BYP30-600
Maximum Ratings :
Symbol Parameters / Conditions Ratings
Electrical Characteristics :
V
RRM
Peak Repetitive Reverse Voltage 600 V
I
RRM
Leakage current ; VR = V
RRM
; Ta = 25 °C
Leakage current ; VR = V
RRM
; Ta = 125 °C
< 0.10 mA
< 4 mA
I
FAV
Maximum average forward rectified current ; sin. 180 ;
T
case
=85 °C
30 A
I
FSM
Peak forward surge current ; T
vj
= 25 °C; single half
sine wave ; 10 ms
T
vj
= 150 °C; single half sine wave ; 10 ms
320 A
300 A
I2t Fusing limit ; T
vj
= 25 °C 510 A2s
V
F
Forward voltage drop ; Tvj = 25 °C; I F = 30 A
2.35 V max
t
rr
Reverse recovery time 120 ns
Thermal Characteristics :
R
thjc
Thermal resistance junction to case 0.35 °C/W
R
thch
Thermal resistance case to heat sink
0.25 °C/W
T
A
Operating Temperature
-40 °C ….+ 150 °C
T
Stg
Storage Temperature -40 °C ….+ 150 °C
Outline :
Case Outline Plastic Moulded Case DO-218