HORIZONTAL DEFLECTION TRANSISTOR
NPN BU508D 8A 1500V
Technical Data
…designed for use in large screen color deflection circuits.
F Collector-Emitter Voltage-VCES=1500Vdc
F Low Thermal Resistance 1¼C/W increased Reliability
F TO-218 Package for Low Cost Mounting
F Switching Times with Inductive Loads,
Tf=0.5us(Typ)@IC=4.5A
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V
Collector- Emitter Voltage V
Emitter Base Voltage V
Collector Current – Continuous
_Peak(1)
Base Current – continuous
-- Peak(1)
Total Power Dissipation @
I
I
CM
I
B
IBM
PD 125
TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
Tj,Tstg -65 to +150
C
CEO
CES
EB
thjc
700 Vdc
1500 Vdc
5 Vdc
8
15
4
6
1
1.0
Adc
Adc
Watts
W/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CE
=5 Vdc, ftest=1.0 MHz ]
Characteristic Symbol Min Typ Max Unit
* Off Characteristics :
Collector–Emitter Sustaining Voltage (1)
[ Ic =100 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 1500 Vdc, V
BE
= 0 ]
Emitter Base Leakage
[ VEB = 6V, Ic = 0 ]
* On Characteristics (1):
DC Current Gain
[ Ic = 2.0 Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 4.5 Adc , IB = 2Adc )
Base-Emitter Saturation Voltage
[ Ic = 4.5 Adc , IB = 2Adc ]
V
CEO(sus)
I
I
EBO
h
V
CE(sat)
V
BE(sat)
CES
FE
700 Vdc
0.1 mAdc
300 mAdc
2.25
1 Vdc
1.3 Vdc
Dynamic Characteristics :
Current Gain – Bandwidth Product
[ Ic = 0.1Adc,V
Output Capacitance
(VCB=10Vdc,IE=0,f=0.1MHz)
SWITCHING CHARACTERISTICS
Fall Time
(IC=4.5Adc,IB1=1.8Adc,LB=10µH )
(1) Pulse Test : Pulse Width =5ms , Duty Cycle < 10.0%
C
f
tf
ts
T
OB
--- 7 -- MHz
-- 125 -- pF
--- 0.5 --- µs
8 µs