HORIZONTAL DEFLECTION TRANSISTOR
NPN BU208A, 5A 700V
Technical Data
…designed for use in televisions.
F Collector-Emitter Voltage-VCES=1500Vdc
F Low Thermal Resistance 1¼C/W increased Reliability
F TO-3 Package
F Fast Switching ---400ns Typical Fall Time
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V
Collector- Emitter Voltage V
Emitter Base Voltage V
Collector Current – Continuous
_Peak(1)
Base Current – continuous
-- Peak(1)
Total Power Dissipation @
CEO(SUS)
I
IBM
PD 12.5
TC = 95°C
Derate above 95°C
Operating and Storage junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
Tj,Tstg -65 to +115
I
CM
I
CES
EB
C
B
thjc
700 Vdc
1500 Vdc
5 Vdc
5
7.5
4
3.5
0.625
1.6 °C/W
Adc
Adc
Watts
W/°C
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =100 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 1500 Vdc, V
BE
= 0 ]
V
I
CES
700 Vdc
1 mAdc
Emitter Base Voltage
[ IE = 10mA, Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 4.5 Adc , VCE = 5.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 4.5 Adc , IB = 2Adc )
Base-Emitter Saturation Voltage
[ Ic = 4.5 Adc , IB = 2Adc ]
DYNAMIC CHARACTERISTICS:
Current Gain – Bandwidth Product
[ Ic = 0.1Adc,VCE=5 Vdc, ftest=1.0 MHz ]
Output Capacitance
(VCB=10Vdc,IE=0,f=1MHz)
SWITCHING CHARACTERISTICS
Fall Time
(IC=2Adc,IB1=1Adc,LB=25µH)
Storage Time
(IC=4.5Adc,IB1=1.8Adc,LB=10µH
BV
h
V
CE(sat)
V
BE(sat)
C
FE
f
OB
tf
ts
EBO
T
5
Vdc
2.25
1 Vdc
1.5 Vdc
--- 4 -- MHz
-- 125 -- pF
--- 0.4 --- µs
8 µs
(1) Pulse Test : Pulse Width =300µs , Duty Cycle < 2.0%