USHA BU208 Datasheet
Silicon Power Transistor
BU208
Technical Data
Typical Applications : These devices are designed for horizontal deflection
output stages of large screen colour deflection circuits.
Specification Fetaures :
F High Voltage NPN Silicon Power Transistor
F 5 Amp / 1300 V device in TO-204AA [ TO-3 ] package
F 12.5 Watts device
F VCEO (sus) 600 V
F Collector Emitter Voltage VCE = 1300 V
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V
CEO(SUS)
Collector- Emitter Voltage 600 Vdc
V
V
I
I
I
C
CM
BM
CEX
EB
Collector- Emitter Voltage 1300 Vdc
Emitter Base Voltage 5 Vdc
Collector Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
Base Current –
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
5 Adc
7.5 Adc
4 Adc
Thermal Characteristics :
CE
=5 Vdc , f=1
CB
= 10 Vdc , IE = 0 , f = 0.1
R
thjc
T
L
P
D
Tj & T
Stg
Thermal resistance junction to case
Maximum Lead Temperature for Soldering Purpose : 1/8”
from Case for 5 sec
Total Power Dissipation @ Tc = 95 °C
Derate above 95 °C
Operating and Storage Junction Temperature Range -65 °C ….+ 115 °C
1.6 °C/W
275 °C
12.5 Watta
0.625 W /°C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
Collector – Emitter Sustaining
Voltage [ Ic = 100 mAdc , IB = 0 ]
Collector Cutoff Current
[ VCE = 1300 Vdc , VBE = 0 ]
Emitter Base Voltage
[ IE = 10 mA , Ic = 0 ]
V
CEO(sus)
I
V
CES
EBO
600 Vdc
1 mAdc
5 Vdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
DC Current Gain
[ Ic = 4.5 Adc , VCE = 5 Vdc ]
Collector-Emitter Saturation
V
h
FE
CE(sat)
2.25
Voltage
[ Ic = 4.5 Adc , IB = 2 Adc ]
Base-Emitter Saturation Voltage
[ Ic = 4.5 Adc , IB = 2 Adc ]
V
BE(sat)
5
1.5
Dynamic Characteristics :
Current Gain – Bandwidth Product
f
T
4 MHz
[ Ic = 0.1 Adc , V
MHz ]
Output Capacitance
C
ob
125 pF
[ V
MHz ]
Vdc
Vdc
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