SILICON PLASTIC POWER TRANSISTOR
PNP BD244A/B/C
6A 65W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F Collector-Emitter Saturation Voltage-
VCE=1.5Vdc(Max)@IC=6Adc
F Collector-Emitter Sustaining Voltage-
VCEO(sus)=60/80/100Vdc(Min) BD244A/B/C
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol BD244A BD244B BD244C Unit
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos
Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 65
Tj,Tstg -65 to +150
CEO
I
CB
EB
C
B
60 80 100 Vdc
60 80 100 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
5 Vdc
6
10
2 Adc
Watts
0.52
1.92 °C/W
Adc
W/°C
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CE
=60Vdc,IB=0] BD244B,BD244C
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ] BD244A
BD244B
BD244C
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] BD244A
[V
Collector Cutoff Current
[VCE=60Vdc, V
[VCE=80Vdc, V
[VCE=100Vdc,V
=0] BD244A
BE
=0] BD244B
BE
=0] BD244C
BE
Emitter Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 0.3Adc , VCE = 4.0 Vdc ]
[ Ic = 3Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 6Adc , IB =1Adc ]
Base-Emitter on Voltage
[ Ic =6 Adc , VCE= 4V]
V
V
V
I
h
FE
CE(sat)
I
CE0
I
CES
EBO
Vdc
60
80
100
mAdc
0.7
0.7
µAdc
400
400
400
1 mAdc
30
15
1.5 Vdc
2.0 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ]
Small-Signal Current Gain
[ IC=0.5 Adc, VCE=10 Vdc, f=1kHz]
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
f
T
3 MHz
hfe 20