USHA BD241C, BD241B, BD241A Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN BD241A/B/C
3A 40W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F Collector-Emitter Saturation Voltage-
VCE=1.2Vdc(Max)@IC=3Adc
F Collector-Emitter Sustaining Voltage-
VCEO(sus)=100Vdc(Min)
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol BD241A BD241B BD241C Unit
Collector- Emitter Voltage V
Collector – Emitter Voltage V
Emitter Base Voltage V
Collector Current – Continuos
Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 40
Tj,Tstg -65 to +150
CEO
I
CES
EB
C
B
60 80 100 Vdc
70 90 115 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
5 Vdc
3
5
1 Adc
Watts
0.32
3.125 °C/W
Adc
W/°C
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=60Vdc,IB=0] BD241B,BD241C
BE(on)
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ] BD241A
BD241B
BD241C
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] BD241A
[V
Collector Cutoff Current
[VCE=60Vdc, V
[VCE=80Vdc, V
[VCE=100Vdc,V
=0] BD241A
BE
=0] BD241B
BE
=0] BD241C
BE
Emitter Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 1.0Adc , VCE = 4.0 Vdc ]
[ Ic = 3Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB =600mAdc ]
Base-Emitter on Voltage
[ Ic =3 Adc , VCE= 4V
V
V
V
I
h
FE
CE(sat)
I
CE0
I
CES
EBO
Vdc
60
80
100
mAdc
0.3
0.3
µAdc
200
200
200
1 mAdc
25
10
1.2 Vdc
1.8 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ]
Small-Signal Current Gain
[ IC=0.5 Adc, VCE=10 Vdc, f=1kHz]
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
f
T
3 MHz
hfe 20
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