USHA 2SD880Y Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN 2SD880Y
3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Collector-Emitter Voltage: V
F DC Current Gain: 20 @ I
=3A
C
CEO
=60V
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos I
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
PD 30
Tj,Tstg -55 to +150
CEO
CB
EB
C
B
60 Vdc
60 Vdc
7 Vdc
3 Adc
0.3 Adc
Watts
0.24
W/°C
°C
Thermal resistance junction to case R
thjc
4.16
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=5Vdc,ftest=1.0 MHz ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Breakdown Voltage
[ Ic =50 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCB = 60 Vdc, IB = 0 ]
V
I
CB0
60 Vdc
100
µAdc
Collector–Base Breakdown Voltage
[ Ic =1mAdc, IE = 0 ]
Emitter Cutoff Current
[VEB=7Vdc, IC=0]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 0.5 Adc , VCE = 5.0 Vdc ]
[ Ic =3 Adc , VCE =5.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB = 0.3Adc ) V
Emitter–Base Saturation Voltage
[ Ic =0.5Adc, VCE =5V ] V
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,V
Collector Output Capacitance
VCB=10V,IE=0,f=1MHz
BV
h
FE
CE(sat)
BE(ON)
f
T
C
OB
I
CBO
EBO
60 Vdc
100
100
200
20
1 Vdc
1
3 MHz
70 pF
µAdc
Vdc
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
Loading...