USHA 2SD313 Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN 2SD313
3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Collector-Emitter Voltage: V
F DC Current Gain: 40 @ I
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
=2A
C
CEO
=60V
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos I
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 30
Tj,Tstg -55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
CEO
CB
EB
C
B
60 Vdc
60 Vdc
5 Vdc
3 Adc
0.3 Adc
Watts
0.24
4.16
W/°C
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=5Vdc,ftest=1.0 MHz ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Breakdown Voltage
[ Ic =50 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCB =20 Vdc, IB = 0 ]
V
I
CB0
60 Vdc
100
µAdc
Collector–Base Breakdown Voltage
BV
[ Ic =1mAdc, IE = 0 ]
Emitter Cutoff Current
I
[VEB=5Vdc, IC=0]
* ON CHARACTERISTICS (1):
DC Current Gain
h
FE
[ Ic = 0.1 Adc , VCE = 2.0 Vdc ]
[ Ic =2 Adc , VCE =2.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 2Adc , IB = 0.2Adc ) V
CE(sat)
Emitter–Base Saturation Voltage
[ Ic =1Adc, VCE =2V ] V
BE(ON)
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
f
T
[Ic=0.5Adc,V
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
CBO
EBO
60 Vdc
40
40 320
8 MHz
100
µAdc
1 Vdc
1 Vdc
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