USHA 2SC2233 Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN 2SC2233
4A 40W
Technical Data
…designed for use in B/W TV horizontal deflection output.
F Collector-Base Voltage: V
F DC Current Gain: 20 @ I
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
CBO
=4A
C
=200V
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos I
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 40
Tj,Tstg -55 to +150
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
CEO
CB
EB
C
B
60 Vdc
200 Vdc
5 Vdc
4 Adc
2 Adc
Watts
0.32
3.125
W/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=5Vdc,ftest=1.0 MHz ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Breakdown Voltage
[ Ic =20 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCB = 170 Vdc, IB = 0 ]
V
I
CB0
60 Vdc
10
µAdc
Collector–Base Breakdown Voltage
BV
[ Ic =1mAdc, IE = 0 ]
Emitter-Base Breakdown Voltage
BV
[IE=1mA,IC=0]
* ON CHARACTERISTICS (1):
DC Current Gain
h
FE
[ Ic = 1.0 Adc , VCE = 5.0 Vdc ]
[ Ic =4 Adc , VCE =5.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB = 0.3Adc ] V
CE(sat)
Base Emitter Saturation Voltage
[Ic =4A,IB=0.4A ] V
BE(sat)
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
f
T
[Ic=0.5Adc,V
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
CBO
EBO
200 Vdc
5 Vdc
30
150
20
1 Vdc
1.5 Vdc
10 MHz
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