USHA 2N6292 Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN 2N6292
7A 40W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F DC Current Gain - h FE = 30-150 @ I
F Collector-Emitter Sustaining Voltage – V
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
= 2.0Adc
C
CEO
(sus) = 70 Vdc (Min)
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos
Peak
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
I
PD 40
Tj,Tstg -65 to +150
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
C
B
CEO
CB
EB
thjc
70 Vdc
80 Vdc
5 Vdc
7
10
3 Adc
Watts
0.32
3.125
°C/W
Adc
W/°C
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
V
[ Ic =100 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 60 Vdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 80 Vdc,V
[ VCE =70 Vdc, V
BE(off)
BE(off)
= 1.5 Vdc ]
= 1.5 Vdc ,
Tc = 150 °C ]
Emitter Cutoff Current
[ VBE=5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 2.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 7 Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 7Adc , IB = 3 Adc ) V
Base-Emitter on Voltage
[ Ic =7.0 Adc , VCE= 4.0. VDC ] V
CEO(sus)
I
CE0
I
CEX
I
EBO
h
FE
CE(sat)
BE(on)
70 Vdc
1 mAdc
100
2
µAdc
mAdc
1
mAdc
30
150
2.3
3.5 Vdc
3.0 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
f
T
[Ic=0.5Adc,VCE=4Vdc,ftest=1.0 MHz ]
Small-Signal Current Gain
hfe 20
[ IC= 0.5 Adc, VCE=4.0 Vdc, f=50kHz]
Output Capacitance
C
OB
(VCB=10V,IE=0,f=1.0MHz)
• Indicates within JEDEC Registration Data.
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
10 MHz
250 pF
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