USHA 2N5294 Datasheet
SILICON PLASTIC POWER TRANSISTOR
NPN 2N5294
4A 36W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F DC Current Gain - h FE = 30-120 @ IC =0.5Adc
F Collector-Emitter Sustaining Voltage – V
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
(sus) = 70 Vdc (Min)
CEO
Collector- Emitter Voltage V
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuous I
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 36
Tj,Tstg -65 to +150
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
CEO
CER
CBO
EB
C
B
70 Vdc
75 Vdc
80 Vdc
7 Vdc
4 Adc
2 Adc
Watts
0.288
3.5 °C/W
W/°C
°C
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=4Vdc,ftest=1.0 MHz ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage
(1) [ Ic =100 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCE = 50 Vdc, IB = 0 ]
V
I
CER
70 Vdc
0.5 mAdc
Collector Cutoff Current
[ VCE = 65 Vdc,V
BE(off)
= 1.5 Vdc ]
Emitter Cutoff Current
I
I
CEX
EBO
[ VEB =7.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
h
FE
[ Ic = 0.5 Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic =0..5Adc , IB = 0.05 Adc ) V
CE(sat)
Base-Emitter on Voltage
[ Ic =0.5 Adc , VCE= 4.0. VDC ] V
BE(on)
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
f
T
[Ic=0.2Adc,V
• Indicates within JEDEC Registration Data.
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
0.5 mAdc
1
mAdc
30 120
1.0 Vdc
1.1 Vdc
0.8 MHz
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