Silicon Power Transistor
2N3773
Technical Data
Typical Applications : These devices are designed for high power audio , disk
head positioners and other linear applications. These devices can also be used in
power switching circuits such as relay or solenoid drivers , dc to dc converters or
inverters.
Specification Fetaures :
F Complementary NPN Silicon Power Transistor
F 16 Amp / 140 V device in TO-204AA [ TO-3 ] package
F 150 Watts device
F High safe operating area [ 150 W @ 100 V ]
F Completely characterized for linear operation
F High DC current gain & low saturation voltage
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V
V
V
V
I
I
I
I
CEO
CEX
CBO
EBO
C
CM
B
BM
Collector- Emitter Voltage 140 Vdc
Collector- Emitter Voltage 160 Vdc
Collector - Base Voltage 160 Vdc
Emitter Base Voltage 7 Vdc
Collector Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
Base Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
16 Adc
30 Adc
4 Adc
15 Adc
Thermal Characteristics :
CE
= 140 Vdc , V
BE(off)
= 1.5
CE
= 140 V, V
BE(off)
= 1.5 Vdc ,
R
thjc
P
D
Tj & T
Stg
Thermal resistance junction to case
Total Power Dissipation @ Tc = 25 °C
Derate above 25 °C
Operating and Storage Junction Temperature Range
1.17 °C/W
150 Watta
0.855 W /°C
-65 °C ….+ 200 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
Collector – Emitter Breakdown
Voltage [ Ic = 0.2 Adc , IB = 0 ]
Collector – Emitter Sustaining
Voltage [ Ic = 0.1 Adc , V
1.5 Vdc , RBE = 100 Ohms ]
Collector – Emitter Sustaining
Voltage [ Ic = 0.2 Adc , RBE = 100
Ohms ]
Collector Cutoff Current [ V
120 Vdc , IB = 0 ]
Collector Cutoff Current
[ V
Vdc ]
[ V
Tc = 150 °C ]
Collector Cutoff Current [ V
140 Vdc , IE = 0 ]
Emitter Base Leakage
[ VEB = 7 Vdc , Ic = 0 ]
V
CEO(sus)
V
CEX(sus)
V
CER(sus)
I
CEO
I
CEX
I
CBO
I
EBO
140 Vdc
160 Vdc
150 Vdc
10 Vdc
2
10
2 Vdc
5 mAdc
mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
DC Current Gain
[ Ic = 8 Adc , VCE = 4 Vdc ]
[ Ic = 16 Adc , VCE = 4 Vdc ]
Collector-Emitter Saturation V
h
FE
CE(sat)
60
15
5
Vdc