
GaAs HIGH POWER T-1 PACKAGE
Description Package Dimensions
The MIE-304G1 is an infrared emitting diode in GaAs
technology molded in water clear plastic package.
Features
l Standard T-1 ( φ 3mm ) package, radiation angle : ±10°
l Peak wavelength λp = 940 nm
l Good spectral matching to si-photodetector
Unit : mm (inches )
ψ3.00
(.118)
5.25
1.00
0.80 ±0.50
(.031±.020)
23.40MIN.
(.920)
0.50 TYP.
1.00MIN.
2.54
(.100)
A
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
C
4.00
FLAT DENOTES CATHODE
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 120 mW
Peak Forward Current 1 A
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
02/04/2002

Optical-Electrical Characteristics
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
IF=20mA
IF=50mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2 θ
Ie 1.5 2.5 mW/sr
F
R
λ
∆λ
1/2
Typical Optical-Electrical Characteristic Curves
1
0.5
Relative Radiant Intensity
0
840 880 920 960 1000 1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
100
80
60
40
20
Forward Current (mA)
0
0 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
4
@ TA=25oC
1.30 1.5 V
100
µA
940 nm
50 nm
20 deg .
3.0
=20mA
2.5
F
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60
Output Power To Value I
Ambient Temperature TA (oC)
FIG.3 RELATIVE RADIANT INTENSITY
VS.AMBIENT TEMPERATURE
0° 10° 20°
30°
3
=20mA
F
2
1
Value at I
Output Power Relative To
0
0 20 40 60 80 100
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
Unity Opto Technology Co., Ltd.
1.0
0.9
0.8
Relative Radiant Intensity
0.5 0.3 0.1 0.2 0.4 0.6
FIG.5 RADIATION DIAGRAM
50°
90°
02/04/2002