
AlGaAs HIGH POWER SIDE LOOK PACKAGE
Description Package Dimensions
The MIE-114H4 is a AlGaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114H4 provides a broad range of
intensity selection .
5.72±0.2
(.225±.008)
12.7 MIN.
(.500)
Features
l High power
l Mechanically and spectrally matched to
the MID-11422 of phototransistor .
1.0 MIN.
(.040)
C A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Lead spacing is measured where the leads emerge from the package.
4.45±0.20
(.175±.008)
2.22
(.087)
(.087)
CATHODE
2.54 NOM.
SEE NOTE 3
1.22±0.10
0.5 TYP.
(.020)
Unit: mm ( inches )
0.76±0.10
(.030±.008)
1.55±0.02
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 75 mW
Peak Forward Current 1 A
Continuos Forward Current 50 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
o
C to + 100oC
o
C to + 100oC
o
C for 5 seconds
@ TA=25oC
02/04/2002

Optical-Electrical Characteristics
Relative Radiant Intensity
Relative Radiant Intensity
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Incidance
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
IF=20mA
IF=20mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2θ
Ee - 1.0
F
R
λp
∆λ
1/2
Typical Optical-Electrical Characteristic Curves
1
0.5
0
750 850 950
100
80
60
40
20
Forward Current (mA)
0
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
FIG.1 SPECTRAL DISTRIBUTION
Wavelength (nm)
@ TA=25oC
-
-
- -
-
-
-
1.5 1.6 V
100
850
30
80
3.0
2.5
2.0
1.5
1.0
0.5
Relative Radiant Intensity
0.0
-40 -20 0 20 40 60
Ambient Temperature TA(oC)
FIG.3 RELATIVE RADIANT INTENSITY
-
-
-
mW/cm
µA
nm
nm
deg .
2
Unity Opto Technology Co., Ltd.
5
4
3
2
1
0
0 20 40 60 80 100
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
0° 10° 20°
1.0
0.9
0.8
Relative Radiant Intensity
0.5 0.3 0.1 0.2 0.4 0.6
30°
40°
50°
60°
70°
80°
90°
02/04/2002