Unity Opto Technology MIE-114G1 Datasheet

GaAs SIDE LOOK PACKAGE

INFRARED EMITTING DIODE

MIE-114G1

Description Package Dimensions

(.100)

(.061±.008)

(.048±.004)

(.225±.008)

The MIE-114G1 is a GaAs infrared emitting diode
molded in clear , lensed side looking package .
The MIE-114G1 provides a broad range of
intensity selection .

5.72±0.20

12.70 MIN.
(.500)

Features

l Selected to specific on-line intensity and

radiant intensity ranges

l Low cost, plastic side looking package
l Mechanically and spectrally matched to

1.00 MIN.
(.040)

C A

4.45±0.20

(.175±.008)

2.22

(.087)

(.087)

CATHODE

2.54 NOM.

SEE NOTE 3

1.22±0.10

0.50 TYP.
(.020)

Unit: mm ( inches )

0.76±0.10

(.030±.008)

1.55±0.02

The MID-11422 Phototransistor .

Absolute Maximum Ratings

Parameter Maximum Rating
Power Dissipation 75 mW
Peak Forward Current 1 A
Continuos Forward Current 50 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature

NOTES :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

@ TA=25oC

-55oC to + 100oC

-55oC to + 100oC
260oC for 5 seconds

Unity Opto Technology Co., Ltd.

02/04/2002

MIE-114G1

Optical-Electrical Characteristics

VS. AMBIENT TEMPERATURE

Relative Radiant Intensity
Relative Radiant Intensity

FIG.5 RADIATION DIAGRAM

Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Incidance
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle

IF=20mA
IF=20mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2θ

Ee - 0.6 - mW/cm

F

R

λ

∆λ

1/2

Typical Optical-Electrical Characteristic Curves

1

0.5

0

840 880 920 960 1000 1040

FIG.1 SPECTRAL DISTRIBUTION

100

80

60

40

20

Forward Current (mA)

0

0 1.2 1.6 2.0 2.4 2.8

Forward Voltage (V)

FIG.2 FORWARD CURRENT VS.

FORWARD VOLTAGE

5

4

3

2

1

0

0 20 40 60 80 100

Forward Current (mA)

FIG.4 RELATIVE RADIANT INTENSITY

VS. FORWARD CURRENT

Wavelength (nm)

@ TA=25oC

- 1.25 1.40 V

- - 100

µA

- 940 - nm

- 50 - nm

- 80 - deg .

3.0

2.5

2.0

1.5

1.0

0.5

Relative Radiant Intensity

0.0

-40 -20 0 20 40 60

Ambient Temperature TA(℃)

FIG.3 RELATIVE RADIANT INTENSITY

0° 10° 20°

1.0

0.9

0.8

Relative Radiant Intensity

0.5 0.3 0.1 0.2 0.4 0.6

2

30°

40°
50°

60°
70°

80°
90°

Unity Opto Technology Co., Ltd.

02/04/2002