GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
MIE-114A2
Description Package Dimensions
(.100)
(.061±.008)
(.048±.004)
(.225±.008)
The MIE-114A2 is a GaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114A2 provides a broad range of
4.45±0.20
(.175±.008)
2.22
(.087)
(.087)
1.22±0.10
Unit: mm ( inches )
0.76±0.10
(.030±.008)
intensity selection .
Features
l Selected to specific on-line intensity and
radiant intensity ranges
l Low cost , plastic side looking package
l Mechanically and spectrally matched to
The MID-11422 of phototransistor .
5.72±0.2
12.7 MIN.
(.500)
CATHODE
0.5 TYP.
(.020)
1.0 MIN.
(.040)
2.54 NOM.
SEE NOTE 3
C A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
1.55±0.02
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 75 mW
Peak Forward Current 1 A
Continuos Forward Current 50 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
02/04/2002
MIE-114A2
Optical-Electrical Characteristics
FIG.1 SPECTRAL DISTRIBUTION
FIG.5 RADIATION DIAGRAM
0.5 0.3 0.1 0.2 0.4 0.6
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Incidance
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
Half View Angle
IF=20mA
IF=20mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2θ
Ee - 0.8
F
R
λp
∆λ
1/2
Typical Optical-Electrical Characteristic Curves
1
0.5
0
Relative Radiant Intensity
840 880 920 960 1000 1040
Wavelength (nm)
-
1.2 1.35 V
- -
-
-
-
940
50
80
-
100
-
-
-
@ TA=25℃
mW/cm
2
µA
nm
nm
deg .
100
80
60
40
20
Forward Current (mA)
0
0 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
4
=20mA
3
F
2
1
Value at I
Output Power Relative To
0
0 20 40 60 80 100
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
3.0
2.5
=20mA
F
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60
Output Power To Value I
Ambient Temperature TA (℃)
FIG.3 RELATIVE RADIANT INTENSITY VS.
0° 10° 20°
30°
40°
1.0
0.9
0.8
Relative Radiant Intensity
50°
60°
70°
80°
90°
Unity Opto Technology Co., Ltd.
02/04/2002
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