Unity Opto Technology MID-A841G Datasheet
8mm
PIN PHOTODIODE
MID-A841G
Description
R NOM.
Large area planar silicon photodiode mounted
on a two lead PC board substrate. A clear
molded lens is used to increase sensitivity.
Low junction capacitance permits fast
response time.
.310 (7.87)
.300 (7.62)
Package Dimensions
1.35 (34.3)
MINIMUM
.075 (1.91)
.070 (1.78)
.030
(0.76)
45°
Unit: inches ( mm )
.218 (5.54)
.208 (5.28)
Features
l High photo sensitivity
l Low junction capacitance
l High cut-off frequency
l Fast switching time
l Acceptance viwe angle : 90°
Absolute Maximum Ratings
.332 (8.43)
.320 (8.13)
.200 (5.08)
NOM.
.020
DIA. NOM.
(0.51)
Chip Active Area : 0.017 in2 (11mm2)
.377 (9.58)
.357 (9.07)
ANODE
CATHODE
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
@ TA=25oC
Parameter Maximum Rating Unit
-20oC to + 75oC
-20oC to + 75oC
260oC for 5 seconds
12/06/2000
MID-A841G
Optical-Electrical Characteristics
S
Temperature Coefficient Of
A
Characteristic Test Conditions Symbol Min. Type . Max. Unit
@ T
=25oC
A
Sensitivity @ 10-8 To 10-2 W
Sensitivity @ 880nm
Responsivity V=0V, 880nm
Open Circuit Voltage H = 100 fc, 2850K
Dark Current
Dark Current Temperature Coefficient H = 0
Shunt Resistance
880nm AXIS
AXIS
TC
V
H = 0, VR = 10V I
TC I
H = 0, VF = 10mV R
R
OC
D
RSH Temperature Coefficient H = 0, VF = 10mV TC R
Junction Capacitance
Spectral Application Range
H = 0, V = 0V,
Freq=1MHZ
C
λrange
SH
J
0.17 0.25 0.28 A/W
S
e
- - 0.2
0.13 0.18 0.25
%/oC
µ
µW/cm
2
- 0.33 - V
- 3 30 nA
D
- +11 -
- 67 -
SH
- -11 -
%/oC
MΩ
%/oC
- 85 - pF
400 - 1100 nm
Spectral Response-Peak
Breakdown Voltage H = 0, I = 0.1mA
Response Time λ=940nm
RL=10K OHMS I=2µA
RISE 10 - 90%
FALL 90 - 10%
90% OF MAX -
Angular Response DEG
70% OF MAX 50% OF MAX -
Unity Opto Technology Co., Ltd.
λ
P
V
BR
t
r
t
f
- 925 - nm
- 150 - V
- 60 -
- 60 13 18 26
30 35 40
35 45 50
nS
12/6/2000
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