Unity Opto Technology MID-94A3L Datasheet

SIDE LOOK PACKAGE

NPN PHOTOTRANSISTOR

MID-94A

3L

Description Package Dimensions

(.114±.005)

(.100)

(.100)

(.050)

123

123

The MID-94A3L is a TWIN NPN silicon phototransistor
mounted in a special dark plastic side looking package
and suitable for the IRED (940nm) Type.

5.00 ± .08

(.197±.003)

.25 ± 1.00

(.010±.040)

2.50 ± .08

3.00 ± .08
(.118±.003)

Unit : mm

C .80

C(.032)

Features

l Wide range of collector current
l Low cost plastic package

2.90 ± .12

.50 TYP.

10.00 MIN.
(.040)

RADIANT SENSITIVE AREA

1.77 ± .20

(.070±.008)

1.00 ± .12

(.040±.005)

1.27 ± 0.01

3PLACES- 0.5 ± .05

( .020 ± .002 )

(.020)

2.54

13.00 MIN.
(.511)

3.00MIN
(.118)

2.54

EMITTER (PTR A)

COLLECTOR(COM)

221

3

EMITTER (PTR B)

NOTES :

1. All dimensions are in millimeters.(inches).

2. PTR die vertical & horizontal placement tolerance is ± 0.12 mm from the center line.
Allowed die rotation must be 5 or less.

3. Protruded resin under flange is 1.5mm (.059") max.

4. Lead spacing is measured where the leads emerge from the package.

4.77 ± .20

(.188±.008)

.61 ±.01
(.020)

0.61

(.020)

Absolute Maximum Ratings

Parameter Maximum Rating Unit
Power Dissipation 100 mW
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

@ TA=25oC

-55oC to +100oC

-55oC to +100oC

260oC for 5 seconds

02/04/2002

MID-94A

3L

Optical-Electrical Characteristics

Relative Collector Current

(mA)

Parameter Test Conditions Symbol Min. Typ . Max. Unit

Collector-Emitter

Ic=0.1mA V

(BR)CEO

Breakdown Voltage Ee=0
Emitter-Collector Ie=0.1mA

V

(BR)ECO

Breakdown Voltage Ee=0
Collector-Emitter
Saturation Voltage Ee=0.1mW/cm
Rise Time
Fall Time
Collector Dark

Ic=0.5 mA V

2

VR =5V, RL=1KΩ
IC=1mA
VCE=10V I

CE(SAT)

Current Ee=0
On State Collector
Current Ee=0.1mW/cm

VCE=5V I

2

C(ON)

Typical Optical-Electrical Characteristic Curves

@ TA=25oC

30 V

5 V

0.1 0.4 V

Tr 10 µS
Tf 10

CEO

100 nA

0.16 0.4 mA

A

1000

µ

100

10

1

0.1

0.01

0.001

Iceo-Collector Dark Current -

0 40 80 120

TA - Ambient Temperature -oC

FIG.1 COLLECTOR DARK CURRENT

VS AMBIENT TEMPERATURE

20

Vcc = 5 V
VRL= 1 V

16

F = 100 Hz
PW = 1 ms

12

8

4

0

Tr Tf - Rise and Fall Time - mS

0 2 4 6 8 10

RL - Load Resistance - KW

FIG.3 RISE AND FALL TIME

VS LOAD RESISTANCE

4.0

Vce = 5 V

3.5

Ee = 0.1
mW/cm

2

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Ic Normalized Collector Current

-75 -25 25 75 125

TA - Ambient Temperature -oC

FIG.2 NORMALIZED COLLECTOR CURRENT

VS AMBIENT TEMPERATURE

2.0

Vce = 5 V

1.6

1.2

0.8

0.4

0.0
0 0.1 0.2 0.3 0.4 0.5 0.6

Ee - Irradiance - mW/cm

2

FIG.4 RELATIVE COLLECTOR CURRENT

VS IRRADIANCE

Unity Opto Technology Co., Ltd.

02/04/2002