Description Package Dimensions
The MID-56H19 is a photo diode mounted in special
ψ5.05
Unit: mm ( inches )
dark end look plastic package and suitable for the
IRED (850nm/880nm) Type.
7.62
(.300)
5.90
1.00
Features
l High photo sensitivity
l Low junction capacitance
l High cut-off frequency
l Fast switching time
l Acceptance viwe angle : 60°
0.50TYP.
(.020)
A
23.40MIN.
(.920)
1.00MIN.
(.040)
2.54
(.100)
C
FLAT DENOTES CATHOD
5.47
(.215)
Application
l Data communication
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 150 mW
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Notes :
1.Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2.Protruded resin under flange is 1.0 mm (.040") max.
3.Lead spacing is measured where the leads emerge from the
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
Optical-Electrical Characteristics
Parameter Test Conditions Symbol Min. Type . Max. Unit
Reverse Break Down Voltage
IR=100µA
V
Ee=0
VR=10V
Reverse Dark Current 30 nA
Ee=0
Open Circuit Voltage
λ=850nm
Ee=0.1mW/cm
2
V
VR =10V,λ=850nm
Rise Time
RL=50Ω
VR =5V , λ=850nm
Light Current
Ee=0.1mW/cm
2
VR =3V , f=1MHZ
Total Capacitance
Ee=0
Typical Optical-Electrical Characteristic Curves
4000
(BR)R
I
D
OC
30
350
Tr 40
Tf 30
I
L
C
T
7 12
25
@ TA=25oC
V
mV
nsec
µA
pF
3000
2000
1000
Dark Current - pA
0
0 5 10 15 20
Reverse Voltage - V
R
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TEMP=25oC , Ee=0 mW/cm
200
150
100
50
Total Power Dissipation mW
0
0 20 40 60 80 100
2
Ambient Temperature -oC
FIG.3 TOTAL POWER DISSIPATION
40
Capacitance C - pF
0.01 0.1 1 10 100
Reverse Voltage- V
R
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ, Ee=0mW/cm
1000
100
10
1
2
Dark Current IR - nA
0.1
0 20 40 60 80 100
Ambient Temperature-oC
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
2
Unity Opto Technology Co., Ltd.
02/04/2002