Description Package Dimensions
The MID-54A19 is a photodiode mounted in special
ψ5.05
dark end look plastic package and suitable for the
IRED (940nm) type.
7.62
(.300)
5.90
1.00
Features
l High photo sensitivity
l Low junction capacitance
l High cut-off frequency
l Fast switching time
l Acceptance angle : 40°
0.50TYP.
(.020)
2.54
(.100)
A
23.40MIN.
(.920)
1.00MIN.
(.040)
C
5.47
(.215)
Application
l Data communication
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 150 mW
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
Optical-Electrical Characteristics
Reverse Break Down Voltage
Parameter Test Conditions Symbol Min. Type . Max. Unit
IR=100µA
Ee=0
Reverse Dark Current
VR=10V
Ee=0
V
(BR)R
I
D
30
30
@ TA=25oC
V
nA
Open Circuit Voltage λ=940nm 350
2
2
Rise Time
Fall Time
Light Current
Total Capacitance
Ee=0.1mW/cm
VR =10V λ=940nm
RL=1KΩ
VR =5V, λ=940nm
Ee=0.1mW/cm
VR =3V, f=1MHZ
V
OC
Tr 30
Tf 30
I
L
C
Ee=0
Typical Optical-Electrical Characteristic Curves
4000
3000
2000
1000
0
0 5 10 15 20
Reverse Voltage - V
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
200
R
2
7 12
T
100
80
40
20
Capacitance C - pF
0
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
1000
25
0.01
0.1 1 10 10
Reverse Voltage- V
F=1MHZ, Ee=0mW/cm
R
2
mV
nS
µA
pF
Total Power Dissipation mW Dark Current - pA
Unity Opto Technology Co., Ltd.
150
100
50
0
0 20 40 60 80 100
Ambient Temperature -oC
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
100
10
1
Dark Current IR - nA
0
0 20 40 60 80 100
Ambient Temperature-oC
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
2
02/04/2002