TO-46 PACKAGE
NPN PHOTOTRANSISTOR
MID-40A22
Description Package Dimensions
(.020)
(.984 )
45°
The MID-40A22 is a NPN silicon phototransistor mounted
Unit : mm ( inches )
in a lensed, special dark plastic package. The lensing effect
4.75
of the package allows an acceptance angle of 25° ¸that
(.187)
measured from the optical axis to the half power point .
5.80
(.228)
0.70
(.028)
Features
l Wide range of collector current
l Lensed for high sensitivity
l Low cost plastic package
l Acceptance angle : 25°
l Good spectral matching IRED (λp 940 nm) type
25.00MIN
0.50 TYP
1.00MIN
2.54
(.100)
E
C
(.039)
5.46
(.215)
COLLECTOR
INDICATOR
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 100 mW
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Notes :
1. All dimensions are in inches (millimeters).
2. Tolerance is ± .010" (0.25 mm) unless otherwise noted.
3. Protruded resin under flange is .059" (1.5mm) max.
4. Lead spacing is measured where the leads emerge from the package.
5. Specifications are subject to change without notice.
@ TA=25oC
o
C to +100oC
o
C to +100oC
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
12/4/2000
MID-40A22
Optical-Electrical Characteristics
cc
2
Typical Optical-Electrical Characteristic Curves
VS AMBIENT TEMPERATURE
VS AMBIENT TEMPERATURE
FIG.5 SENSITIVITY DIAGRAM
0.5 0.3 0.1 0.2 0.4 0.6
90°
70°
60°
50°
80
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Collector-Emitter Ic=0.1mA
Breakdown Voltage Ee=0
Emitter-Collector Ie=0.1mA
Breakdown Voltage Ee=0
Collector-Emitter Ic=0.5mA
Saturation Voltage Ee=0.1mW/cm
@ TA=25oC
V
(BR)CEO
V
(BR)ECO
V
2
CE(SAT)
30
5
0.4 V
V
V
Rise Time V
=5V, RL=1KΩ Tr 15
Fall Time IC=1mA Tf 15
Collector Dark VCE=10V
Current Ee=0
On State Collector VCE=5V
Current
A
µ
1000
100
10
1
0.1
0.01
0.001
0 40 80 120
Iceo-Collector Dark Current S
µ
Tr Tf Rise and Fall Time -
TA - Ambient Temperature - oC
FIG.1 COLLECTOR DARK CURRENT
200
Vcc = 5 V
160
VRL= 1 V
120
F = 100 Hz
PW = 1 ms
80
40
0
0 2 4 6 8 10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Ee=0.1mW/cm
1.0
0.9
I
CEO
I
C(ON)
4
Vce =5 V
3.5
3
Ee =0.1 mW/cm
2.5
@λ= 940 nm
2
1.5
1
0.5
0
-75 -25 25 75 125
Normalized Collector Current
TA - Ambient Temperature -oC
C
I
FIG.2 NORMALIZED COLLECTOR CURRENT
5
Vce = 5 V
4
3
2
1
0
Relative Collector Current
0 1 2 3 4 5 6
Ee - Irradiance - mW/cm
FIG.4 RELATIVE COLLECTOR CURRENT
0° 10° 20°
12/4/2000
VS IRRADIANCE
30°
40°
µS
nA100
1
2
2
mA
0.8
Relative Sensitivity
Unity Opto Technology Co., Ltd.
12/04/2000
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