UNITRODE UC1610, UC2610, UC3610 Technical data

DESCRIPTION
This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors.
The use of Schottky diode technology features high efficiency through lowered for­ward voltage drop and decreased reverse recovery time.
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Dual Schottky Diode Bridge
FEATURES
Monolithic Eight-Diode Array
Exceptional Efficiency
Low Forward Voltage
Fast Recovery Time
High Peak Current
Small Size
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Peak Forward Current
UC1610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC3610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation at T
Storage Tempe rature Rang e. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperat ure (Solde ring, 10 Sec onds ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Note: Consult Packaging Sec tion of Databook f or thermal limitations and con sider at ions of
package.
CONNECTION DIAGRAMS
UC1610 UC2610 UC3610
A = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
DIL-8 (TOP VIEW) N or J Package
PLCC-20 (TOP VIEW) Q Package
3/95
SOIC-16 (TOP VIEW) DW Package
UC1610 UC2610 UC3610
ELECTRICAL CHARACTERISTICS:
All specifications ap ply to each individu al diode. TJ = 25°C except as noted. TA = TJ.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage Dro p I
Leakage Current V
F = 100mA 0.35 0.5 0.7 V
I
F = 1A 0.8 1.0 1.3 V
R = 40V .01 0.1 mA
V
R = 40V, TJ = +100°C 0.1 1.0 mA
Reverse Recovery 0.5A Forward to 0.5A Revers e 15 ns Forward Recovery 1A Forward to 1.1V Recovery 30 ns Junction Capacitance V
R = 5V 70 pF
Note: At forwar d curre nt s of grea ter than 1. 0A a parasit ic current of appr oxim at ely 10m A may be collected by adjacen t diodes.
Reverse Current vs V oltage Forward Curren t vs Voltage
UNITRODE INTEGRATED CIRCUITS 7 CONTINENTAL BLVD. MERRI MACK , NH 0305 4 TEL. (603) 424-2410 FAX (603) 424-3460
Forward Recovery CharacteristicsReverse Recovery Characteristics
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