United Monolithic Semiconductors EC2612-99F-00 Datasheet

EC2612

40GHz Super Low Noise PHEMT

Pseudomorphic High Electron Mobility Transistor

Description

The EC2612 is based on a 0.15µm gate
pseudomorphic high electron mobility
transistor (0.15µm PHEMT) technology.
Gate width is 120µm and the 0.15µm
T-shaped aluminium gate features low
resistance and excellent reliability.

The device shows a very high
transconductance which leads to very high
frequency and low noise performances.

It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.

Main Features

¦ 0.8dB minimum noise figure @ 18GHz
¦ 1.5dB minimum noise figure @ 40GHz
¦ 12dB associated gain @ 18GHz
¦ 9.5dB associated gain @ 40GHz

¦ Chip size : 0.63 x 0.37 x 0.1 mm

D: Drain
G: Gate
S: Source

Main Characteristics

Tamb = +25°C

Symbol Parameter Min Typ Max Unit

Idss Saturated drain current 10 40 60 mA

NFmin Minimum noise figure (F=40GHz) 1.5 1.9 dB

Ga Associated gain (F=40GHz) 8 9.5 dB

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!

Electrical Characteristics

Tamb = +25°C

Ref. : DSEC26120077 -17-Marc-00 1/8 Specifications subject to change without notic e

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : [phone] - Fax : [phone]

EC2612

40GHz Super Low Noise PHEMT

Symbol Parameter

Idss Saturated drain current Vds = 2V

Vp Pinch off voltage Vds = 2V

Gm Transconductance Vds = 2V

Igsd Gate to source/drain leakage

current

Test

Conditions

Vgs = 0V

Ids = 0.1mA

Ids = 25mA
Vgsd = -2V 5 µA

Min Typ Max Unit

10 35 60 mA

-1.0 -0.7 -0.3 V

50 70 mS

Dynamic characteristics

Tamb=25°C

Symbol Parameter

NF Minimum noise figure F= 30GHz 1.3 1.7

Test

Conditions

F= 12GHz 0.5 0.7 dB

Min Typ. Max Unit

Vds=2V F= 40GHz 1.5 1.9 dB

Ids=Idss/3 F= 12GHz 13 14 dB

Ga Associated Gain F= 30GHz 9 10

F= 40GHz 8 9.5 dB

Absolute Maximum Ratings (1)

Tamb = +25°C

Symbol Parameter Values Units

Vds Drain to source voltage 3.5 V
Vgs Gate to source voltage -2.5 V

Pt Total power dissipation 280 mW

Tch Operating channel temperature +175 °C

Tstg Storage temperat ur e r ange -55 to +175 °C

(1) Operation of this device above any one of these parameters may cause permanent damage

Ref. : DSEC26120077 -17-Marc-00 2/8 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

40GHz Super Low Noise PHEMT

Typical Scattering Parameters

Tamb = +25°C
"S" Parameters, including Lg =Ld~0. 15nH
Vds = 3V, Ids = 30mA

EC2612

Freq.

GHz

1 -0,14 -11,0 -34,26 81,5 15,88 169,7 -4,78 -8,8
2 -0,19 -21,6 -28,41 76,1 15,69 162,2 -4,89 -18,3
3 -0,35 -32,3 -25,12 70,0 15,48 154,5 -5,11 -27,2
4 -0,62 -42,5 -22,92 64,0 15,20 146,7 -5,39 -36,0
5 -0,89 -52,5 -21,36 58,1 14,87 139,3 -5,80 -44,4
6 -1,12 -62,2 -20,14 52,2 14,53 132,3 -6,19 -53,5
7 -1,39 -71,9 -19,30 46,4 14,16 125,7 -6,67 -61,5
8 -1,70 -80,5 -18,69 42,0 13,74 119,5 -7,07 -68,5

9 -1,96 -88,2 -18,10 38,0 13,34 113,9 -7,38 -75,6
10 -2,15 -95,9 -17,61 33,5 12,96 108,3 -7,69 -83,2
11 -2,34 -104,1 -17,23 29,4 12,57 103,0 -8,04 -90,1
12 -2,47 -111,8 -16,88 25,8 12,23 97,6 -8,30 -96,9
13 -2,62 -118,7 -16,56 22,1 11,83 92,4 -8,55 -104,7
14 -2,78 -125,5 -16,35 18,7 11,40 87,4 -8,85 -111,9
15 -2,91 -132,8 -16,23 15,4 11,02 82,5 -9,03 -118,3
16 -3,00 -138,8 -16,11 12,9 10,60 78,1 -9,20 -123,8
17 -3,05 -144,2 -15,89 10,0 10,24 73,7 -9,29 -130,8
18 -3,08 -150,1 -15,79 6,7 9,86 69,5 -9,28 -137,3
19 -3,13 -156,5 -15,82 4,1 9,49 65,2 -9,34 -143,2
20 -3,17 -161,6 -15,77 1,5 9,14 61,2 -9,38 -148,9
21 -3,24 -166,5 -15,80 -2,0 8,75 57,2 -9,45 -155,9
22 -3,26 -171,9 -15,90 -4,8 8,40 53,3 -9,47 -160,6
23 -3,30 -176,7 -16,00 -6,9 8,02 50,0 -9,50 -164,8
24 -3,27 179,3 -15,96 -9,8 7,68 46,8 -9,43 -169,2
25 -3,26 175,8 -16,06 -12,6 7,39 43,6 -9,31 -174,6
26 -3,20 172,0 -16,12 -14,9 7,12 40,4 -9,20 -177,9
27 -3,17 167,4 -16,14 -17,2 6,86 37,1 -9,13 177,8
28 -3,15 163,5 -16,16 -20,0 6,62 33,4 -9,06 173,5
29 -3,19 159,2 -16,36 -22,2 6,28 29,7 -8,95 168,4
30 -3,15 155,1 -16,39 -23,1 5,98 26,5 -8,81 166,0
31 -3,10 151,2 -16,29 -24,9 5,70 23,1 -8,67 161,3
32 -3,03 147,7 -16,37 -27,5 5,40 19,5 -8,59 155,5
33 -2,99 144,1 -16,54 -28,8 5,12 16,7 -8,45 152,7
34 -2,98 139,8 -16,62 -30,6 4,89 13,4 -8,38 150,0
35 -2,97 136,5 -16,74 -32,6 4,68 10,1 -8,34 145,6
36 -2,89 132,3 -16,88 -34,5 4,51 6,4 -8,26 141,4
37 -2,85 128,2 -16,84 -36,4 4,24 3,0 -8,10 138,3
38 -2,83 124,9 -16,86 -39,7 4,04 -0,7 -7,89 133,7
39 -2,82 121,6 -17,04 -43,4 3,84 -4,4 -7,77 129,7
40 -2,83 116,9 -17,11 -46,0 3,47 -8,6 -7,71 127,3

S11

dB

S11

/°

S12

dB

S12

/°

S21

dB

S21

/°

S22

dB

S22

/°

Tamb = +25°C

Ref. : DSEC26120077 -17-Marc-00 3/8 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]