United Monolithic Semiconductors CHX2093a99FF-00 Datasheet

10-30GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHX2093a
Main Features
Frequency performance : 9-10GHz
2.5dB conversion loss @ Pin=5dBm
DC bias : Vd=3.5V @ Id=80mA
Chip size : 1.94 x 1.17 x 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fin Input frequency range 9 10 GHz
Fout Output frequency range 27 30 GHz
Pin Input power 5 7 9 dBm
Lc Conversion loss @ Pin=5dBm
0.5
2.5
4
dB
Pin=9dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHX20939137 1/5 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
3.5
5.5
7
dB
CHX2093a
10-30GHz Frequency multiplier
Electrical Characteristics
Tamb = +25°C, Vd = 3.5V, Id=80mA
Symbol Parameter Min Typ Max Unit
Fin Input frequency range 9 10 GHz
Fout Output frequency range 27 30 GHz
Pin Input power 5 7 9 dBm
Lc Conversion loss @ Pin=5dBm
Pin=9dBm First harmonic suppression 10 dBc Second harmonic suppression 10 dBc
VSWRin Input VSWR 2:1
Vd Drain Voltage 3.5 3.8 V
Id Drain current 80 100 mA
Vg Gate voltage -0.4 -0.2 0 V
0.5
3.5
2.5
5.5
4 7
dB dB
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol Parameter Values Unit
Vd Drain bias voltage 4 V Vg Gate bias voltage -2 V
Pin Maximum peak input power overdrive (2) +15 dBm
Top Operating temperature rang e -40 to +85 °C
Tstg Storag e t em per ature range -55 to +125 °C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHX20939137 2/5 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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