United Monolithic Semiconductors CHX2089-99F-00 Datasheet
9-18GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The CHX2089 is a cascadable by 2 frequency
multiplier monolithic circuit.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
Main Features
■ Broadband performances : 8-11.5GHz
■ 15dBm output power for +12dBm input power
■ DC bias : Vd=3.5Volt@Id=60mA
■ Chip size : 1.62 x 0.89 x 0.10 mm
20
16
12
8
4
0
-4
-8
Output Power ( dBm )
-12
-16
-20
8 9 10 11 12 13
CHX2089
typical measurement.
P_out_H1 P_out_H2
Input Freq ( GHz )
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fin Input frequency range 8 9 11.5 GHz
Fout Output frequency range 16 18 23 GHz
Pin Input power 12 15 dBm
Pout Output power for +12dBm input power 11 15 dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHX20891323 -19-Nov.-01
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
1/4
United Monolithic Semiconductors S.A.S.
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHX2089
9-18GHz Frequency Multiplier
Electrical Characteristics
Tamb = +25°C, Vd = 3.5V , Vg1 = -0.9V , Vg2 adjusted for Id=50 mA (Vg2 t yp.= -0. 3V) .
Symbol Parameter Min Typ Max Unit
Fin Input frequency range 8 9 11.5 GHz
Fout Output frequency range 16 18 23 GHz
Pin Input power 12 15 dBm
Pout Output power for +12dBm input power 11 15 dBm
Is/Fo Fin rejection at the output 15 20 dBc
VSWRin Input VSWR 2.0:1
VSWRout Output VSWR 2.5:1
Id Bias current without RF 40 70 mA
Id Bias current with RF (Pin=12 dBm) 60 85 mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 4 V
Id Drain bias current 90 mA
Vg Gate bias voltage -2 to +0.4 V
Pin Input power 20 dBm
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHX20891323 -19-Nov.-01
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
2/4
Specifications subject to change without notice
Loading...