United Monolithic Semiconductors CHX1094-99F-00 Datasheet

12-36GHz Frequency Multiplier

GaAs Monolithic Microwave IC

Description

The CHX1094 is a cascadable frequency
multiplier by 3 monolithic circuit.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.

The circuit is manufactured with a P-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.

Main Features

■ Broadband performances : 12-13.5GHz

■ 10dBm output power for +14dBm input power

■ DC bias : Vd=3.Volt @Id=60mA

■ Chip size : 2.07 x 1.03 x 0.10 mm

CHX1094

15.0

10.0

5.0

0.0

-5.0

-10.0

-15.0

-20.0

Output power (dBm)

-25.0

-30.0

-35.0

-40.0
11 11.5 12 12.5 13 13.5 14

P ( 3*Fin )

P ( 2*Fin )

P ( Fin )

Input Frequency (GHz)

typical measurement

Main Characteristics

Tamb. = 25°C

Symbol Parameter Min Typ Max Unit

Fin Input frequency range 12 13.5 GHz

Fout Output frequency range 36 40.5 GHz

Pin Input power 14 dBm

Pout Output power @ Pin= 14dBm 10 dBm

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHX10941071 -12-Mar.-01

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : [phone] - Fax : [phone]

1/4

Specifications subject to change without notice

CHX1094

12-36GHz Frequency Multiplier

Electrical Characteristics

Tamb = +25°C, Vgm = -1.5V , Vgb = -0.2V.

Symbol Parameter Min Typ Max Typ Unit

Fin Input frequency range 12 13.5 14 GHz

Fout Output frequency range 36 40.5 42 GHz

Pin Input power 12 14 16 16 dBm

Pout Output power @ Pin=14dBm 8 10 5 dBm
H3/H2

H3/H1

VSWRin Input VSWR 2:1 2:1

VSWRout Output VSWR 2.5:1 2.5:1

Vd DC voltage 2.5 3.5 4 V

Id Bias current 60 80 80 mA

nd

Harmonic rejection ( Pin ≤ 14dBm)

2

Fund. rejection ( Pin ≤ 14dBm)

810 5 dBc

30 35 dBc

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol Parameter Values Unit

Vd Drain bias voltage 4.5 V

Id Drain bias current 120 mA
Vg Gate bias voltage -2 to +0.4 V
Ta Operating temperature range -40 to +85 °C

Tstg Storage temperature rang e -55 to +155 °C

(1) Operation above anyone of these parameters may cause permanent damage of this device.

Ref. : DSCHX10941071 -12-Mar.-01

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

2/4

Specifications subject to change without notice