United Monolithic Semiconductors CHU2277-99F-00 Datasheet
W-band Multifunction : Multiplier / MPA
GaAs Monolithic Microwave IC
Description
The CHU2277 is a W-band monolithic
multifunction which integrates a frequency
multiplier, a four-stage amplifier and a power
divider. The frequency multiplier is based on an
active transistor and allows to operate at low
input level with a reduced power consumption.
This chip provides two outputs at 77GHz, the
main one is for the transmission path and the
auxiliary one for the receiving mixer (s) LO
signal. All the active devices are internally self
biased. This chip is compatible with automatic
equipment for assembly.
The circuit is manufactured with the P-HEMT
process : 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
n Wide operating frequency range
n Low input power : 5dBm typical
n High output power (OUT1)
n Auxiliary output power (OUT2)
n Low AM noise
n High temperature range
n On-chip self biasing
n Automatic assembly oriented
n Low DC power consumption
n Chip size : 4.65 x 1.6 x 0.1mm
CHU2277
+V -V
OUT1
IN
W-band multifunction block-diagram
20
18
16
14
12
10
8
6
Output power (dBm)
4
2
0
75 75,5 76 76,5 77 77,5 78 78,5 79
Typical output power characteristic
x2
OUT1
OUT2
Output frequency (GHz)
Pin = 7dBm
(on wafer measurement)
OUT2
Main Characteristics
Tamb = +25°C
Symbol Parameter Min Typ Max Unit
F_in Input frequency 38 38.5 GHz
F_out Output frequency 76 77 GHz
P_out1 Main output power 13 dBm
P_out2 Auxiliary output power 10 dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. DSCHU22771074 -15-Mar.-01
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1/7
Specifications subject to change without notice
CHU2277
W-band Multiplier/MPA
Electrical Characteristics
Full operating temperature range, used according to section “Typical assembly and bias
configuration”
Symbol Parameter Min Typ Max Unit
F_in Input frequency 38 38.5 GHz
F_out Output frequency 76 77 GHz
P_in Input power 0 5 12 dBm
P_out1 Output power (OUT1) (1) 11 13 16 dBm
P_out2 Output power (OUT2) (1) 8 10 13 dBm
Fin_rej fundamental rejection (dBc/Pout1(2Fin) ) 45 55 dBc
S_rej Spurious rejection (dBc/Pin)
12.75 GHz
25.5 GHz
38.25 GHz
51 GHz
63.75 GHz
76.5 GHz
89.25 GHz
102 GHz
An Amplitude noise @ 1kHz (SSB)
Amplitude noise @ 10kHz (SSB)
Amplitude noise @ 100kHz (SSB)
Amplitude noise @ 200kHz (SSB)
Amplitude noise @ 1MHz (SSB)
VSWR_in
VSWR at input port (50Ω)
+V Positive supply voltage (2) 4.4 4.5 4.6 V
+I Positive supply current 180 240 mA
-V Negative supply voltage (2) -4.6 -4.5 -4.4 V
-I Negative supply current 14 20 mA
Top Operating temperature range -40 100 °C
40
40
35
50
40
15
40
50
50
50
45
60
50
20
50
60
-137
-145
-151
-153
-157
-132
-140
-146
-148
-152
2:1 2.5:1
dBc
dBc/Hz
(1) Defined on load VSWR ≤≤≤≤1.5:1.
(2) Negative supply voltage must be applied at least 1us before positive supply
voltage.
Ref. DSCHU22771074 -15-Mar.-01
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
2/7
Specifications subject to change without notice
W-band Multiplier/MPA
CHU2277
Absolute Maximum Ratings (1)
Symbol Parameter Values Unit
P_in Input power (2) 13 dBm
+V Positive supply voltage 5 V
-V Negative supply voltage -5 V
+I Positive supply current 250 mA
-I Negative supply current 20 mA
Tstg Storage temperature rang e -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. DSCHU22771074 -15-Mar.-01
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
3/7
Specifications subject to change without notice
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