United Monolithic Semiconductors CHT3091a-99F-00 Datasheet

DC-40GHz ATTENUATOR
GaAs Monolithic Microwave IC
Description
The circuit is manufactured with a MESFET process, 0.7µm gate length, via holes through the substrate and air bridges.
CHT3091a
.
Main Features
Broadband performances : DC-40GHz
15dBm minimum input 1dB compression point
( any attenuation)
DC bias : -5V<VS<0V ; -5V<VP<0V
Chip size : 0.91 x 0.86 x 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fin Input frequency range DC 40 GHz
Min Att. Minimum attenuation |S21| (VS=0V;VP=-5V) 3 dB
Max Att. Maximum attenuation |S21| (VS=-5V;VP=0V) 20 dB
VSWRin Input VSWR (any attenuation) 2.:1
VSWRout Output VSWR (any attenuation) 2.:1
Pin1dB Input 1dB compression point.(any attenuation) 15 dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHT30911074 -15-Mar.-01 1/4 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHT3091a
DC-40GHz Attenuator
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
VP VP control voltage -6V V VS VS control voltage -6V V Pin RF input power 20 dBm
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. : DSCHT30911074 -15-Mar.-01 2/4 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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