United Monolithic Semiconductors CHR2293-99F-00 Datasheet

Q

20-24GHz Integrated Down Converter

GaAs Monolithic Microwave IC

Description

The CHR2293 is a multifunction chip which
integrates a LO X2 multiplier, a balanced cold
FET mixer, and a RF LNA. It is designed for a
wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.

The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.

Main Features

• Broadband performances : 20-24GHz

• 11 dB conversion gain

• 4dB noise figure

• 10dBm LO input power

• -8dBm RF input power (1dB gain comp.)

• Low DC power consumption, 130mA@3.5V

• Chip size : 2.49 X 1.97 X 0.10 mm

Main Characteristics

Tamb. = 25°C

Parameter Min Typ Max Unit

GM
GB
VDM
VDL
GX
VGA

CHR2293

LO

RF

I

FRF RF frequency range 24 30 GHz
FLO LO frequency range 9.25 12.75 GHz

FIF IF frequency range 0.25 1.5 GHz
Gc Conversion gain +11 dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHR22932108 -18-April-02 1/4 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

20-24GHz MFC Down Converter

CHR2293

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd = 3.5V

Symbol Parameter Min Typ Max Unit

FRF RF frequency range 20 24 GHz
FLO LO frequency range 9.25 12.75 GHz

FIF IF frequency range 0.25 1.5 GHz
Gc Conversion gain (1) +11 dB

NF Noise Figure (1) 4 dB

PLO LO Input power +10 dBm

Img Sup Image Suppression (2) 17 dBc

P1dB Input power at 1dB gain compression -8 dBm
LO VSWR Input LO VSWR (1) 2.0:1
RF VSWR Input RF VSWR (1) 2.0:1

Id Bias current (3) 130 mA

(1) On Wafer measurements
(2) With external I/ Q combiner
(3) Current source biasing network is recommended. Optimum performances for Idm= 50mA

and Idl= 80mA

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol Parameter Values Unit

Vd Drain bias voltage 4.0 V

Id Drain bias current 200 mA

Vg Gate bias voltage -2.0 to +0.4 V

Pin Maximum peak input power overdrive (2) +15 dBm

Ta Operating temperature range -40 to +85 °C

Tstg Storage temperature range -55 to +155 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.

Ref. : DSCHR22932108 -18-April-02 2/4 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]