United Monolithic Semiconductors CHR2292-99F-00 Datasheet

Q

17-20GHz Integrated Down Converter

GaAs Monolithic Microwave IC

Description

The CHR2292 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is des igned for
a wide range of app lic at ion s , t ypical l y com mercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.

The circuit is manufactured with a PM-HEMT
process, 0.25µm gate l ength, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.

Main Features

• Broadband performances : 17-20GHz

• 13dB conversion gain

• 4.0dB noise figure

• 10dBm LO input power

• -10dBm RF input power (1dB gain comp.)

• Low DC power consumption, 110mA@3.5V

• Chip size : 2.49 X 2.13 X 0.10 mm

Main Characteristics

Tamb. = 25°C

Parameter Min Typ Max Unit

CHR2292

GM
GB
VDM
VDL
GX
VGA

20

16

12

8

4

0

-4

-8

-12

-16

Conversion Gain & Image suppression (dB)

-20
12 14 16 18 20 22 24

Conversion Gain for F_IF=1GHz (on wafer meas.)

LO

RF

Gc_channel_inf_rf- Gc_channel_sup_rf­Gc_channel_inf_rf+ Gc_channel_sup_rf+

2*LO Frequency (GHz)

P_LO=+10dBm / P_RF= -20dBm

I

FRF RF frequency range 17 20 GHz
FLO LO frequency range 7.5 10 GHz

FIF IF frequency range 0.25 1.5 GHz
Gc Conversion gain 13 dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHR22921201 -20-July-01 1/6 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

17-20GHz Mfc Down Converter

CHR2292

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd = 3.5V

Symbol Parameter Min Typ Max Unit

FRF RF frequency range 17 20 GHz
FLO LO frequency range 7.5 10 GHz

FIF IF frequency range 0.25 1.5 GHz

PLO LO Input power +10 dBm

Gc Conversion gain (1) 13 dB

NF Noise Figure (1) 4.0 dB

Img Sup Image Suppression (1) 15 dBc

P1dB RF Input power at 1dB gain compression (1) -10 dBm
LO VSWR Input LO VSWR (1) 1.5:1
RF VSWR Input RF VSWR (1) 2.5:1

Id Bias current (2) 110 mA

(1) On Wafer measurements without bonding wires at the RF ports.
(2) Current source biasing network is recommended. Optimum performances for Idm=50mA and

Idl=60mA

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol Parameter Values Unit

Vd Drain bias voltage 4.0 V

Id Drain bias current 200 mA

Vg Gate bias voltage -2.0 to +0.4 V

Pin Maximum peak input power overdrive (2) +15 dBm

Ta Operating temperature range -40 to +85 °C

Tstg Storage temperature range -55 to +155 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.

Ref. : DSCHR22921201 -20-July-01 2/6 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]