United Monolithic Semiconductors CHR2291-99F-00 Datasheet

Q

12-17GHz Integrated Down Converter

GaAs Monolithic Microwave IC

Description

The CHR2291 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is des igned for
a wide range of ap plic ati on s , t ypical l y com mercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.

The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.

Main Features

• Broadband performances : 12-17GHz

• 10 dB conversion gain

• 3.5dB noise figure

• 10dBm LO input power

• -8dBm RF input power (1dB gain comp.)

• Low DC power consumption, 130mA@3.5V

• Chip size : 2.49 X 2.13 X 0.10 mm

CHR2291

GM
GB
VDM
VDL
GX
VGA

Conversion Gain & Image suppression @ IF=1& 1.5GHz

14
12
10

8
6
4
2
0

(dB)

-2

-4

-6

-8

-10

-12

-14

-16
11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0

LO

RF

Typical on wafer measurement:

2LO Frequency

RF Frequency (GHz)

I

Main Characteristics

Tamb. = 25°C

FRF RF frequency range 12 17 GHz
FLO LO frequency range 5.25 7.75 GHz

FIF IF frequency range 0.25 1.5 GHz
Gc Conversion gain +10 dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHR22912218 06-Aug.-02 1/6 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

Parameter Min Typ Max Unit

12-17GHz Integrated Down Converter

CHR2291

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA

Symbol Parameter Min Typ Max Unit

FRF RF frequency range 12 17 GHz
FLO LO frequency range 5.25 7.75 GHz

FIF IF frequency range 0.25 1.5 GHz
Gc Conversion gain (1) +10 dB

NF Noise Figure (1) 3.5 dB

PLO LO Input power +10 dBm

Img Sup Image Suppression 15 dBc

P1dB Input power at 1dB gain compression -8 dBm
LO VSWR Input LO VSWR (1) 2.0:1
RF VSWR Input RF VSWR (1) 2.0:1

Id Bias current (2) 100 mA

(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA

and Idl= 50mA

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol Parameter Values Unit

Vd Maximum drain bias voltage 4.0 V

Id Maximum drain bias current 180 mA

Vg Gate bias voltage -2.0 to +0.4 V

Vdg Maximum drain to gate voltage ( Vd– Vg) +5 V

Pin Maximum peak input power overdrive (2) +15 dBm

Tch Maximum channel temperature 175 °C

Ta Operating temperature range -40 to +85 °C

Tstg Storage temperature range -55 to +125 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.

Ref. : DSCHR22912218 06-Aug.-02 2/6 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]