
CHS2190a
Ref. : DSCHS21909137 1/4 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
50-60GHz Reflective SPDT Switch
GaAs Monolithic Microwave IC
Description
The CHS2190a is a wideband monolithic diode
based reflective switch.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a high
performance Schottk y diode process, 1µm gate
length (stepper lithography), via holes through
the substrate and air bridges.
Main Features
þ Broadband performances : 50-60GHz
þ Low insertion loss : 2dB max
þ High isolation : 25dB min
þ Chip size : 2.16 x 0.75 x 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Il ON state insertion loss 1.5 2 dB
Is OFF state isolation @ Pin<6dBm 25 30 dB
Is
OFF state isolation @ 6≤Pin≤15dBm
15 17 dB
VSWR Input and output matching 2:1
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

CHS2190a
50-60GHz Reflective SPDT switch
Ref. : DSCHS21909137 2/4 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Biasing conditions
Symbol Parameter Min Typ Max Unit
Voff OFF state control voltage -3 2.5 V
Von ON state control voltage 4.5 V
Ion ON state control current 20 24 mA
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol Parameter Values Unit
Vak Max. negative anode cathode voltage -3.5 V
Ig Max. forward current in Schot t ky diodes 30 mA
Pin Maximum peak input power overdrive (2) +18 dBm
Top Operating temper at ur e r ange -40 to +85 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.